Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer
Abstract Silicon quantum dot (Si-QD) embedded in amorphous silicon oxide is used for p-i-n solar cell on quartz substrate as a photogeneration layer. To suppress diffusion of phosphorus from an n-type layer to a Si-QD photogeneration layer, niobium-doped titanium oxide (TiOx:Nb) is adopted. Hydroflu...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2020-02-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-020-3272-8 |
| _version_ | 1797715251070763008 |
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| author | Ryushiro Akaishi Kohei Kitazawa Kazuhiro Gotoh Shinya Kato Noritaka Usami Yasuyoshi Kurokawa |
| author_facet | Ryushiro Akaishi Kohei Kitazawa Kazuhiro Gotoh Shinya Kato Noritaka Usami Yasuyoshi Kurokawa |
| author_sort | Ryushiro Akaishi |
| collection | DOAJ |
| description | Abstract Silicon quantum dot (Si-QD) embedded in amorphous silicon oxide is used for p-i-n solar cell on quartz substrate as a photogeneration layer. To suppress diffusion of phosphorus from an n-type layer to a Si-QD photogeneration layer, niobium-doped titanium oxide (TiOx:Nb) is adopted. Hydrofluoric acid treatment is carried out for a part of the samples to remove the thermal oxide layer in the interface of TiO x :Nb/n-type layer. The thermal oxide acts as a photo-generated carrier-blocking layer. Solar cell properties using 10-nm-thick TiO x :Nb without the thermal oxide are better than those with the thermal oxide, notably short circuit current density is improved up to 1.89 mA/cm2. The photo-generated carrier occurs in Si-QD with quantum confinement effect. The 10-nm-thick TiO x :Nb with the thermal oxide layer effectively blocks P; however, P-diffusion is not completely suppressed by the 10-nm-thick TiO x :Nb without the thermal oxide. These results indicate that the total thickness of TiO x :Nb and thermal oxide layer influence the P-blocking effect. To achieve the further improvement of Si-QD solar cell, over 10-nm-thick TiO x :Nb is needed. |
| first_indexed | 2024-03-12T08:04:08Z |
| format | Article |
| id | doaj.art-a15ec5e0365e42c3b989a3e44fbe696e |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T08:04:08Z |
| publishDate | 2020-02-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-a15ec5e0365e42c3b989a3e44fbe696e2023-09-02T19:43:10ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2020-02-011511710.1186/s11671-020-3272-8Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking LayerRyushiro Akaishi0Kohei Kitazawa1Kazuhiro Gotoh2Shinya Kato3Noritaka Usami4Yasuyoshi Kurokawa5Material Process Engineering, Graduate School of Engineering, Nagoya UniversityMaterial Process Engineering, Graduate School of Engineering, Nagoya UniversityMaterial Process Engineering, Graduate School of Engineering, Nagoya UniversityDepartment of Electrical and Mechanical Engineering, Nagoya Institute of TechnologyMaterial Process Engineering, Graduate School of Engineering, Nagoya UniversityMaterial Process Engineering, Graduate School of Engineering, Nagoya UniversityAbstract Silicon quantum dot (Si-QD) embedded in amorphous silicon oxide is used for p-i-n solar cell on quartz substrate as a photogeneration layer. To suppress diffusion of phosphorus from an n-type layer to a Si-QD photogeneration layer, niobium-doped titanium oxide (TiOx:Nb) is adopted. Hydrofluoric acid treatment is carried out for a part of the samples to remove the thermal oxide layer in the interface of TiO x :Nb/n-type layer. The thermal oxide acts as a photo-generated carrier-blocking layer. Solar cell properties using 10-nm-thick TiO x :Nb without the thermal oxide are better than those with the thermal oxide, notably short circuit current density is improved up to 1.89 mA/cm2. The photo-generated carrier occurs in Si-QD with quantum confinement effect. The 10-nm-thick TiO x :Nb with the thermal oxide layer effectively blocks P; however, P-diffusion is not completely suppressed by the 10-nm-thick TiO x :Nb without the thermal oxide. These results indicate that the total thickness of TiO x :Nb and thermal oxide layer influence the P-blocking effect. To achieve the further improvement of Si-QD solar cell, over 10-nm-thick TiO x :Nb is needed.https://doi.org/10.1186/s11671-020-3272-8Silicon quantum dotSolar cellNb-doped titanium oxideAmorphous silicon oxideThermal oxide |
| spellingShingle | Ryushiro Akaishi Kohei Kitazawa Kazuhiro Gotoh Shinya Kato Noritaka Usami Yasuyoshi Kurokawa Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer Nanoscale Research Letters Silicon quantum dot Solar cell Nb-doped titanium oxide Amorphous silicon oxide Thermal oxide |
| title | Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer |
| title_full | Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer |
| title_fullStr | Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer |
| title_full_unstemmed | Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer |
| title_short | Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer |
| title_sort | effect of the niobium doped titanium oxide thickness and thermal oxide layer for silicon quantum dot solar cells as a dopant blocking layer |
| topic | Silicon quantum dot Solar cell Nb-doped titanium oxide Amorphous silicon oxide Thermal oxide |
| url | https://doi.org/10.1186/s11671-020-3272-8 |
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