A High Sensitivity Electric Field Microsensor Based on Torsional Resonance
This paper proposes a high sensitivity electric field microsensor (EFM) based on torsional resonance. The proposed microsensor adopts torsional shutter, which is composed of shielding electrodes and torsional beams. The movable shielding electrodes and the fixed sensing electrodes are fabricated on...
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MDPI AG
2018-01-01
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Online Access: | http://www.mdpi.com/1424-8220/18/1/286 |
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author | Zhaozhi Chu Chunrong Peng Ren Ren Biyun Ling Zhouwei Zhang Hucheng Lei Shanhong Xia |
author_facet | Zhaozhi Chu Chunrong Peng Ren Ren Biyun Ling Zhouwei Zhang Hucheng Lei Shanhong Xia |
author_sort | Zhaozhi Chu |
collection | DOAJ |
description | This paper proposes a high sensitivity electric field microsensor (EFM) based on torsional resonance. The proposed microsensor adopts torsional shutter, which is composed of shielding electrodes and torsional beams. The movable shielding electrodes and the fixed sensing electrodes are fabricated on the same plane and interdigitally arranged. Push–pull electrostatic actuation method is employed to excite the torsional shutter. Simulation results proved that the torsional shutter has higher efficiency of charge induction. The optimization of structure parameters was conducted to improve its efficiency of charge induction further. A micromachining fabrication process was developed to fabricate the EFM. Experiments were conducted to characterize the EFM. A good linearity of 0.15% was achieved within an electrostatic field range of 0–50 kV/m, and the uncertainty was below 0.38% in the three roundtrip measurements. A high sensitivity of 4.82 mV/(kV/m) was achieved with the trans-resistance of 100 MΩ, which is improved by at least one order of magnitude compared with previously reported EFMs. The efficiency of charge induction for this microsensor reached 48.19 pA/(kV/m). |
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institution | Directory Open Access Journal |
issn | 1424-8220 |
language | English |
last_indexed | 2024-04-14T02:02:40Z |
publishDate | 2018-01-01 |
publisher | MDPI AG |
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series | Sensors |
spelling | doaj.art-a16698f8a7eb4d77817ecd890aa6156f2022-12-22T02:18:48ZengMDPI AGSensors1424-82202018-01-0118128610.3390/s18010286s18010286A High Sensitivity Electric Field Microsensor Based on Torsional ResonanceZhaozhi Chu0Chunrong Peng1Ren Ren2Biyun Ling3Zhouwei Zhang4Hucheng Lei5Shanhong Xia6State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaThis paper proposes a high sensitivity electric field microsensor (EFM) based on torsional resonance. The proposed microsensor adopts torsional shutter, which is composed of shielding electrodes and torsional beams. The movable shielding electrodes and the fixed sensing electrodes are fabricated on the same plane and interdigitally arranged. Push–pull electrostatic actuation method is employed to excite the torsional shutter. Simulation results proved that the torsional shutter has higher efficiency of charge induction. The optimization of structure parameters was conducted to improve its efficiency of charge induction further. A micromachining fabrication process was developed to fabricate the EFM. Experiments were conducted to characterize the EFM. A good linearity of 0.15% was achieved within an electrostatic field range of 0–50 kV/m, and the uncertainty was below 0.38% in the three roundtrip measurements. A high sensitivity of 4.82 mV/(kV/m) was achieved with the trans-resistance of 100 MΩ, which is improved by at least one order of magnitude compared with previously reported EFMs. The efficiency of charge induction for this microsensor reached 48.19 pA/(kV/m).http://www.mdpi.com/1424-8220/18/1/286electric field microsensortorsional resonanceMEMSefficiency of charge induction |
spellingShingle | Zhaozhi Chu Chunrong Peng Ren Ren Biyun Ling Zhouwei Zhang Hucheng Lei Shanhong Xia A High Sensitivity Electric Field Microsensor Based on Torsional Resonance Sensors electric field microsensor torsional resonance MEMS efficiency of charge induction |
title | A High Sensitivity Electric Field Microsensor Based on Torsional Resonance |
title_full | A High Sensitivity Electric Field Microsensor Based on Torsional Resonance |
title_fullStr | A High Sensitivity Electric Field Microsensor Based on Torsional Resonance |
title_full_unstemmed | A High Sensitivity Electric Field Microsensor Based on Torsional Resonance |
title_short | A High Sensitivity Electric Field Microsensor Based on Torsional Resonance |
title_sort | high sensitivity electric field microsensor based on torsional resonance |
topic | electric field microsensor torsional resonance MEMS efficiency of charge induction |
url | http://www.mdpi.com/1424-8220/18/1/286 |
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