A High Sensitivity Electric Field Microsensor Based on Torsional Resonance

This paper proposes a high sensitivity electric field microsensor (EFM) based on torsional resonance. The proposed microsensor adopts torsional shutter, which is composed of shielding electrodes and torsional beams. The movable shielding electrodes and the fixed sensing electrodes are fabricated on...

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Main Authors: Zhaozhi Chu, Chunrong Peng, Ren Ren, Biyun Ling, Zhouwei Zhang, Hucheng Lei, Shanhong Xia
Format: Article
Language:English
Published: MDPI AG 2018-01-01
Series:Sensors
Subjects:
Online Access:http://www.mdpi.com/1424-8220/18/1/286
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author Zhaozhi Chu
Chunrong Peng
Ren Ren
Biyun Ling
Zhouwei Zhang
Hucheng Lei
Shanhong Xia
author_facet Zhaozhi Chu
Chunrong Peng
Ren Ren
Biyun Ling
Zhouwei Zhang
Hucheng Lei
Shanhong Xia
author_sort Zhaozhi Chu
collection DOAJ
description This paper proposes a high sensitivity electric field microsensor (EFM) based on torsional resonance. The proposed microsensor adopts torsional shutter, which is composed of shielding electrodes and torsional beams. The movable shielding electrodes and the fixed sensing electrodes are fabricated on the same plane and interdigitally arranged. Push–pull electrostatic actuation method is employed to excite the torsional shutter. Simulation results proved that the torsional shutter has higher efficiency of charge induction. The optimization of structure parameters was conducted to improve its efficiency of charge induction further. A micromachining fabrication process was developed to fabricate the EFM. Experiments were conducted to characterize the EFM. A good linearity of 0.15% was achieved within an electrostatic field range of 0–50 kV/m, and the uncertainty was below 0.38% in the three roundtrip measurements. A high sensitivity of 4.82 mV/(kV/m) was achieved with the trans-resistance of 100 MΩ, which is improved by at least one order of magnitude compared with previously reported EFMs. The efficiency of charge induction for this microsensor reached 48.19 pA/(kV/m).
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spelling doaj.art-a16698f8a7eb4d77817ecd890aa6156f2022-12-22T02:18:48ZengMDPI AGSensors1424-82202018-01-0118128610.3390/s18010286s18010286A High Sensitivity Electric Field Microsensor Based on Torsional ResonanceZhaozhi Chu0Chunrong Peng1Ren Ren2Biyun Ling3Zhouwei Zhang4Hucheng Lei5Shanhong Xia6State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, ChinaThis paper proposes a high sensitivity electric field microsensor (EFM) based on torsional resonance. The proposed microsensor adopts torsional shutter, which is composed of shielding electrodes and torsional beams. The movable shielding electrodes and the fixed sensing electrodes are fabricated on the same plane and interdigitally arranged. Push–pull electrostatic actuation method is employed to excite the torsional shutter. Simulation results proved that the torsional shutter has higher efficiency of charge induction. The optimization of structure parameters was conducted to improve its efficiency of charge induction further. A micromachining fabrication process was developed to fabricate the EFM. Experiments were conducted to characterize the EFM. A good linearity of 0.15% was achieved within an electrostatic field range of 0–50 kV/m, and the uncertainty was below 0.38% in the three roundtrip measurements. A high sensitivity of 4.82 mV/(kV/m) was achieved with the trans-resistance of 100 MΩ, which is improved by at least one order of magnitude compared with previously reported EFMs. The efficiency of charge induction for this microsensor reached 48.19 pA/(kV/m).http://www.mdpi.com/1424-8220/18/1/286electric field microsensortorsional resonanceMEMSefficiency of charge induction
spellingShingle Zhaozhi Chu
Chunrong Peng
Ren Ren
Biyun Ling
Zhouwei Zhang
Hucheng Lei
Shanhong Xia
A High Sensitivity Electric Field Microsensor Based on Torsional Resonance
Sensors
electric field microsensor
torsional resonance
MEMS
efficiency of charge induction
title A High Sensitivity Electric Field Microsensor Based on Torsional Resonance
title_full A High Sensitivity Electric Field Microsensor Based on Torsional Resonance
title_fullStr A High Sensitivity Electric Field Microsensor Based on Torsional Resonance
title_full_unstemmed A High Sensitivity Electric Field Microsensor Based on Torsional Resonance
title_short A High Sensitivity Electric Field Microsensor Based on Torsional Resonance
title_sort high sensitivity electric field microsensor based on torsional resonance
topic electric field microsensor
torsional resonance
MEMS
efficiency of charge induction
url http://www.mdpi.com/1424-8220/18/1/286
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