Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center
The below bandgap optical transitions of an aluminum nitride (AlN) crystal grown on a tungsten (W) substrate by physical vapor transport (PVT) are investigated by below-bandgap-excited photoluminescence (PL) spectroscopy and first-principles calculations. Oxygen (O) is the only impurity in the AlN-o...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-08-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0012685 |