Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics
In this study, we extend the analyses done on sputtered BixSe1-x based accumulation mode FETs. Previously, we studied the basic electrical and leakage properties of these FET devices. We extend our analyses to obtain key parameters of the BixSe1-x (x = 0.44) film at various gate voltages. We start b...
| Główni autorzy: | , , |
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| Format: | Artykuł |
| Język: | English |
| Wydane: |
AIP Publishing LLC
2021-01-01
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| Seria: | AIP Advances |
| Dostęp online: | http://dx.doi.org/10.1063/9.0000027 |
| _version_ | 1830351029788475392 |
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| author | Protyush Sahu Jun-Yang Chen Jian-Ping Wang |
| author_facet | Protyush Sahu Jun-Yang Chen Jian-Ping Wang |
| author_sort | Protyush Sahu |
| collection | DOAJ |
| description | In this study, we extend the analyses done on sputtered BixSe1-x based accumulation mode FETs. Previously, we studied the basic electrical and leakage properties of these FET devices. We extend our analyses to obtain key parameters of the BixSe1-x (x = 0.44) film at various gate voltages. We start by extracting the sheet carrier density and bulk mobility for different gate voltages, using the Drude model with the previously obtained semi-empirical relationship between carrier concentration and bulk mobility for BixSe1-x. The change in sheet carrier density is a result of accumulation or depletion or majority carriers from the BixSe1-x/SiO2 interface, which show hysteretic behavior. This allows us to calculate the surface sheet carrier density and the quasi-static capacitance at various gate voltages. We use a simple capacitive model to separate the capacitance originating from the gate and the film bulk. The capacitance from the film bulk is due to the surface charge thickness and is directly dependent on the Debye length. From the change of capacitance, with respect to gate voltage, we were able to identify the characteristics of the conduction band edge and the bulk band gap/Dirac cone. |
| first_indexed | 2024-12-20T00:30:57Z |
| format | Article |
| id | doaj.art-a17db28b51f14a4d84f2d704c3b17b1a |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-20T00:30:57Z |
| publishDate | 2021-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-a17db28b51f14a4d84f2d704c3b17b1a2022-12-21T19:59:56ZengAIP Publishing LLCAIP Advances2158-32262021-01-01111015221015221-510.1063/9.0000027Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristicsProtyush Sahu0Jun-Yang Chen1Jian-Ping Wang2Department of Physics and Astronomy, University of Minnesota, 116 Church Street SE, Minneapolis, Minnesota 55455, USADepartment of Electrical and Computer Engineering, University of Minnesota, 200 Union Street SE, Minneapolis, Minnesota 55455, USADepartment of Physics and Astronomy, University of Minnesota, 116 Church Street SE, Minneapolis, Minnesota 55455, USAIn this study, we extend the analyses done on sputtered BixSe1-x based accumulation mode FETs. Previously, we studied the basic electrical and leakage properties of these FET devices. We extend our analyses to obtain key parameters of the BixSe1-x (x = 0.44) film at various gate voltages. We start by extracting the sheet carrier density and bulk mobility for different gate voltages, using the Drude model with the previously obtained semi-empirical relationship between carrier concentration and bulk mobility for BixSe1-x. The change in sheet carrier density is a result of accumulation or depletion or majority carriers from the BixSe1-x/SiO2 interface, which show hysteretic behavior. This allows us to calculate the surface sheet carrier density and the quasi-static capacitance at various gate voltages. We use a simple capacitive model to separate the capacitance originating from the gate and the film bulk. The capacitance from the film bulk is due to the surface charge thickness and is directly dependent on the Debye length. From the change of capacitance, with respect to gate voltage, we were able to identify the characteristics of the conduction band edge and the bulk band gap/Dirac cone.http://dx.doi.org/10.1063/9.0000027 |
| spellingShingle | Protyush Sahu Jun-Yang Chen Jian-Ping Wang Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics AIP Advances |
| title | Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics |
| title_full | Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics |
| title_fullStr | Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics |
| title_full_unstemmed | Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics |
| title_short | Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics |
| title_sort | charge trapping analysis in sputtered bixse1 x based accumulation mode fets ii gate capacitance characteristics |
| url | http://dx.doi.org/10.1063/9.0000027 |
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