Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics

Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics

In this study, we extend the analyses done on sputtered BixSe1-x based accumulation mode FETs. Previously, we studied the basic electrical and leakage properties of these FET devices. We extend our analyses to obtain key parameters of the BixSe1-x (x = 0.44) film at various gate voltages. We start b...

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Dades bibliogràfiques
Autors principals:	Protyush Sahu, Jun-Yang Chen, Jian-Ping Wang
Format:	Article
Idioma:	English
Publicat:	AIP Publishing LLC 2021-01-01
Col·lecció:	AIP Advances
Accés en línia:	http://dx.doi.org/10.1063/9.0000027

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