Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics

Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics

In this study, we extend the analyses done on sputtered BixSe1-x based accumulation mode FETs. Previously, we studied the basic electrical and leakage properties of these FET devices. We extend our analyses to obtain key parameters of the BixSe1-x (x = 0.44) film at various gate voltages. We start b...

Descrizione completa

Dettagli Bibliografici
Autori principali:	Protyush Sahu, Jun-Yang Chen, Jian-Ping Wang
Natura:	Articolo
Lingua:	English
Pubblicazione:	AIP Publishing LLC 2021-01-01
Serie:	AIP Advances
Accesso online:	http://dx.doi.org/10.1063/9.0000027

Documenti analoghi

Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs
di: Protyush Sahu, et al.
Pubblicazione: (2020-01-01)

Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs
di: Yuh-Chen Lin, et al.
Pubblicazione: (2019-01-01)

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect
di: Amin Rassekh, et al.
Pubblicazione: (2020-01-01)

Modeling the Double Layer Capacitance Effect in Electrolyte Gated FETs with Gel and Aqueous Electrolytes
di: Roslyn S. Massey, et al.
Pubblicazione: (2021-12-01)

Lumped-Capacitive Modeling and Sensing Characteristics of an Electrolyte-Gated FET Biosensor for the Detection of the Peanut Allergen
di: Donghoon Kim, et al.
Pubblicazione: (2021-01-01)

Synthesis and study the optical properties of Ge20 Bix Se80-x thin films
di: Waleed Bdaiwi Saleh
Pubblicazione: (2019-02-01)

Tribological properties of BixTiyOz films grown via RF sputtering on 316L steel substrates
di: Johanna Parra, et al.
Pubblicazione: (2015-01-01)

Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET
di: Abdullah Al Mamun Mazumder, et al.
Pubblicazione: (2022-01-01)

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing
di: P. Priyadarshini, et al.
Pubblicazione: (2021-11-01)

Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance
di: Dipshika Das, et al.
Pubblicazione: (2025-01-01)

Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier
di: Sarabdeep Singh, et al.
Pubblicazione: (2023-06-01)

Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs
di: Dong-Ru Hsieh, et al.
Pubblicazione: (2018-01-01)

On the security of the blockchain BIX protocol and certificates
di: Longo, R, et al.
Pubblicazione: (2017)

Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
di: D. P. Samajdar, et al.
Pubblicazione: (2014-01-01)

Quantum capacitance in scaled down III-V FETs
di: Jin, Donghyun, et al.
Pubblicazione: (2010)

Quantum capacitance in scaled down III-V FETs
di: Jin, Donghyun
Pubblicazione: (2010)

BixTey thermoelectric thin films sputtered at room temperature onto moving polymer web: effect of gas pressure on materials properties
di: Tao, X, et al.
Pubblicazione: (2020)

Author Correction: Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing
di: P. Priyadarshini, et al.
Pubblicazione: (2024-04-01)

Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET Architectures: Nanotube FETs Versus Nanowire FETs
di: Shubham Sahay, et al.
Pubblicazione: (2017-01-01)

Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack
di: Jui-Sheng Wu, et al.
Pubblicazione: (2022-01-01)

Trapped modes near Venice storm gates
di: Liao, Ching-Yi (Ching-Yi Roxy), 1975-
Pubblicazione: (2013)

Thermal annealing induced structural, optical and electrical properties change in As40Se60-xBix chalcogenide thin films
di: Mukta Behera, et al.
Pubblicazione: (2019-09-01)

Electronic Structure and Optical Properties of GaAs1-xBix Alloy
di: Xindong You, et al.
Pubblicazione: (2014-01-01)

FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability
di: Daniel Nagy, et al.
Pubblicazione: (2018-01-01)

Is negative capacitance FET a steep-slope logic switch?
di: Wei Cao, et al.
Pubblicazione: (2020-01-01)

EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)
di: Muhaimin Bin Mohd Hashim, et al.
Pubblicazione: (2020-01-01)

Steep switching in trimmed-gate tunnel FET
di: Hidehiro Asai, et al.
Pubblicazione: (2018-09-01)

Spin pumping and large field-like torque at room temperature in sputtered amorphous WTe2−x films
di: Yihong Fan, et al.
Pubblicazione: (2020-04-01)

Analysis of capacitance and charge accumulation for an electric double layer on porous electrode
di: Yoshihiro Shimazu
Pubblicazione: (2023-03-01)

Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique
di: Kadhim A. Al-Hamdani
Pubblicazione: (2010-12-01)

Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET
di: Soohyun Kim, et al.
Pubblicazione: (2020-04-01)

Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)
di: Haoji Wan, et al.
Pubblicazione: (2022-11-01)

Activity and diffusivity of oxygen in the liquid dilute BixSb1-x solutions
di: Jendrzejczyk-Handzlik D., et al.
Pubblicazione: (2018-01-01)

Remote Phonon Scattering in Two-Dimensional InSe FETs with High-<i>κ</i> Gate Stack
di: Pengying Chang, et al.
Pubblicazione: (2018-12-01)

Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials
di: Yongxun Liu, et al.
Pubblicazione: (2014-06-01)

Gate-all-around silicon nanowire FET modeling
di: Chen, Xiangchen
Pubblicazione: (2014)

Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors
di: Bergoi Ibarlucea, et al.
Pubblicazione: (2018-06-01)

The Dual Effects of Gate Dielectric Constant in Tunnel FETs
di: Hao Wang, et al.
Pubblicazione: (2016-01-01)

Embedded gate CVD MoS2 microwave FETs
di: Atresh Sanne, et al.
Pubblicazione: (2017-08-01)

Erratum to: Activity and diffusivity of oxygen in the liquid dilute BixSb1-x solutions
di: Editorial
Pubblicazione: (2021-01-01)