Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics
In this study, we extend the analyses done on sputtered BixSe1-x based accumulation mode FETs. Previously, we studied the basic electrical and leakage properties of these FET devices. We extend our analyses to obtain key parameters of the BixSe1-x (x = 0.44) film at various gate voltages. We start b...
| Hlavní autoři: | , , |
|---|---|
| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
AIP Publishing LLC
2021-01-01
|
| Edice: | AIP Advances |
| On-line přístup: | http://dx.doi.org/10.1063/9.0000027 |