Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs. II. Gate capacitance characteristics
In this study, we extend the analyses done on sputtered BixSe1-x based accumulation mode FETs. Previously, we studied the basic electrical and leakage properties of these FET devices. We extend our analyses to obtain key parameters of the BixSe1-x (x = 0.44) film at various gate voltages. We start b...
| Príomhchruthaitheoirí: | , , |
|---|---|
| Formáid: | Alt |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
AIP Publishing LLC
2021-01-01
|
| Sraith: | AIP Advances |
| Rochtain ar líne: | http://dx.doi.org/10.1063/9.0000027 |