Properties of Single Crystal Silicon Doped with Vanadium
The paper reports the sharp increase in resistivity and the conductivity change (type) in the single-crystal silicon sample doped with vanadium. The electrical and optical properties of single-crystalline silicon were determined Hall- and four-probe measurements and infrared (IR-) spectroscopy. Rela...
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Format: | Article |
Language: | English |
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V.N. Karazin Kharkiv National University Publishing
2024-03-01
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Series: | East European Journal of Physics |
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Online Access: | https://periodicals.karazin.ua/eejp/article/view/22873 |
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author | Khojakbar S. Daliev Zafarjon M. Khusanov |
author_facet | Khojakbar S. Daliev Zafarjon M. Khusanov |
author_sort | Khojakbar S. Daliev |
collection | DOAJ |
description | The paper reports the sharp increase in resistivity and the conductivity change (type) in the single-crystal silicon sample doped with vanadium. The electrical and optical properties of single-crystalline silicon were determined Hall- and four-probe measurements and infrared (IR-) spectroscopy. Relative resistance, charge carrier concentration, mobility, and concentration of optically active oxygen and carbon in the samples were determined layer-by-layer. It is shown that in silicon samples doped with vanadium the concentration of optically active oxygen atoms tends to reduce. |
first_indexed | 2024-03-07T14:33:11Z |
format | Article |
id | doaj.art-a183700dc9f3451bbe6ef8cdb982da8b |
institution | Directory Open Access Journal |
issn | 2312-4334 2312-4539 |
language | English |
last_indexed | 2024-03-07T14:33:11Z |
publishDate | 2024-03-01 |
publisher | V.N. Karazin Kharkiv National University Publishing |
record_format | Article |
series | East European Journal of Physics |
spelling | doaj.art-a183700dc9f3451bbe6ef8cdb982da8b2024-03-05T22:41:10ZengV.N. Karazin Kharkiv National University PublishingEast European Journal of Physics2312-43342312-45392024-03-01136636910.26565/2312-4334-2024-1-3522873Properties of Single Crystal Silicon Doped with VanadiumKhojakbar S. Daliev0Zafarjon M. Khusanov1Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, UzbekistanInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanThe paper reports the sharp increase in resistivity and the conductivity change (type) in the single-crystal silicon sample doped with vanadium. The electrical and optical properties of single-crystalline silicon were determined Hall- and four-probe measurements and infrared (IR-) spectroscopy. Relative resistance, charge carrier concentration, mobility, and concentration of optically active oxygen and carbon in the samples were determined layer-by-layer. It is shown that in silicon samples doped with vanadium the concentration of optically active oxygen atoms tends to reduce.https://periodicals.karazin.ua/eejp/article/view/22873siliconvanadiumdiffusionresistivityoptically activeoxygencarbon |
spellingShingle | Khojakbar S. Daliev Zafarjon M. Khusanov Properties of Single Crystal Silicon Doped with Vanadium East European Journal of Physics silicon vanadium diffusion resistivity optically active oxygen carbon |
title | Properties of Single Crystal Silicon Doped with Vanadium |
title_full | Properties of Single Crystal Silicon Doped with Vanadium |
title_fullStr | Properties of Single Crystal Silicon Doped with Vanadium |
title_full_unstemmed | Properties of Single Crystal Silicon Doped with Vanadium |
title_short | Properties of Single Crystal Silicon Doped with Vanadium |
title_sort | properties of single crystal silicon doped with vanadium |
topic | silicon vanadium diffusion resistivity optically active oxygen carbon |
url | https://periodicals.karazin.ua/eejp/article/view/22873 |
work_keys_str_mv | AT khojakbarsdaliev propertiesofsinglecrystalsilicondopedwithvanadium AT zafarjonmkhusanov propertiesofsinglecrystalsilicondopedwithvanadium |