Properties of Single Crystal Silicon Doped with Vanadium

The paper reports the sharp increase in resistivity and the conductivity change (type) in the single-crystal silicon sample doped with vanadium. The electrical and optical properties of single-crystalline silicon were determined Hall- and four-probe measurements and infrared (IR-) spectroscopy. Rela...

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Main Authors: Khojakbar S. Daliev, Zafarjon M. Khusanov
Format: Article
Language:English
Published: V.N. Karazin Kharkiv National University Publishing 2024-03-01
Series:East European Journal of Physics
Subjects:
Online Access:https://periodicals.karazin.ua/eejp/article/view/22873
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author Khojakbar S. Daliev
Zafarjon M. Khusanov
author_facet Khojakbar S. Daliev
Zafarjon M. Khusanov
author_sort Khojakbar S. Daliev
collection DOAJ
description The paper reports the sharp increase in resistivity and the conductivity change (type) in the single-crystal silicon sample doped with vanadium. The electrical and optical properties of single-crystalline silicon were determined Hall- and four-probe measurements and infrared (IR-) spectroscopy. Relative resistance, charge carrier concentration, mobility, and concentration of optically active oxygen and carbon in the samples were determined layer-by-layer. It is shown that in silicon samples doped with vanadium the concentration of optically active oxygen atoms tends to reduce.
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spelling doaj.art-a183700dc9f3451bbe6ef8cdb982da8b2024-03-05T22:41:10ZengV.N. Karazin Kharkiv National University PublishingEast European Journal of Physics2312-43342312-45392024-03-01136636910.26565/2312-4334-2024-1-3522873Properties of Single Crystal Silicon Doped with VanadiumKhojakbar S. Daliev0Zafarjon M. Khusanov1Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, UzbekistanInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanThe paper reports the sharp increase in resistivity and the conductivity change (type) in the single-crystal silicon sample doped with vanadium. The electrical and optical properties of single-crystalline silicon were determined Hall- and four-probe measurements and infrared (IR-) spectroscopy. Relative resistance, charge carrier concentration, mobility, and concentration of optically active oxygen and carbon in the samples were determined layer-by-layer. It is shown that in silicon samples doped with vanadium the concentration of optically active oxygen atoms tends to reduce.https://periodicals.karazin.ua/eejp/article/view/22873siliconvanadiumdiffusionresistivityoptically activeoxygencarbon
spellingShingle Khojakbar S. Daliev
Zafarjon M. Khusanov
Properties of Single Crystal Silicon Doped with Vanadium
East European Journal of Physics
silicon
vanadium
diffusion
resistivity
optically active
oxygen
carbon
title Properties of Single Crystal Silicon Doped with Vanadium
title_full Properties of Single Crystal Silicon Doped with Vanadium
title_fullStr Properties of Single Crystal Silicon Doped with Vanadium
title_full_unstemmed Properties of Single Crystal Silicon Doped with Vanadium
title_short Properties of Single Crystal Silicon Doped with Vanadium
title_sort properties of single crystal silicon doped with vanadium
topic silicon
vanadium
diffusion
resistivity
optically active
oxygen
carbon
url https://periodicals.karazin.ua/eejp/article/view/22873
work_keys_str_mv AT khojakbarsdaliev propertiesofsinglecrystalsilicondopedwithvanadium
AT zafarjonmkhusanov propertiesofsinglecrystalsilicondopedwithvanadium