Impurity band Mott insulators: a new route to high Tc superconductivity
Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2008-01-01
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| Series: | Science and Technology of Advanced Materials |
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| Online Access: | http://www.iop.org/EJ/abstract/1468-6996/9/4/044104 |
| _version_ | 1818241064296775680 |
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| author | Ganapathy Baskaran |
| author_facet | Ganapathy Baskaran |
| author_sort | Ganapathy Baskaran |
| collection | DOAJ |
| description | Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped) impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors. |
| first_indexed | 2024-12-12T13:23:24Z |
| format | Article |
| id | doaj.art-a18464cf9b0d43e7af74d26efe0cb781 |
| institution | Directory Open Access Journal |
| issn | 1468-6996 1878-5514 |
| language | English |
| last_indexed | 2024-12-12T13:23:24Z |
| publishDate | 2008-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials |
| spelling | doaj.art-a18464cf9b0d43e7af74d26efe0cb7812022-12-22T00:23:15ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142008-01-0194044104Impurity band Mott insulators: a new route to high Tc superconductivityGanapathy BaskaranLast century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped) impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.http://www.iop.org/EJ/abstract/1468-6996/9/4/044104superconductivityMott insulatorsresonating valence bondcupratesdiamond |
| spellingShingle | Ganapathy Baskaran Impurity band Mott insulators: a new route to high Tc superconductivity Science and Technology of Advanced Materials superconductivity Mott insulators resonating valence bond cuprates diamond |
| title | Impurity band Mott insulators: a new route to high Tc superconductivity |
| title_full | Impurity band Mott insulators: a new route to high Tc superconductivity |
| title_fullStr | Impurity band Mott insulators: a new route to high Tc superconductivity |
| title_full_unstemmed | Impurity band Mott insulators: a new route to high Tc superconductivity |
| title_short | Impurity band Mott insulators: a new route to high Tc superconductivity |
| title_sort | impurity band mott insulators a new route to high tc superconductivity |
| topic | superconductivity Mott insulators resonating valence bond cuprates diamond |
| url | http://www.iop.org/EJ/abstract/1468-6996/9/4/044104 |
| work_keys_str_mv | AT ganapathybaskaran impuritybandmottinsulatorsanewroutetohightcsuperconductivity |