Reduced extrinsic recombination process in anatase and rutile TiO2 epitaxial thin films for efficient electron transport layers

Abstract TiO2 is the most widely used material for the electron transport layers (ETLs) because it is characterized by proper band alignment with light absorbers, adequate optical transmittance, and high electron mobility. There are two thermodynamically stable crystal phases of TiO2: anatase and ru...

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Main Authors: Yeon Soo Kim, Hye-Jin Jin, Hye Ri Jung, Jihyun Kim, Bich Phuong Nguyen, Juran Kim, William Jo
Format: Article
Language:English
Published: Nature Portfolio 2021-03-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-86422-9
_version_ 1818749602124267520
author Yeon Soo Kim
Hye-Jin Jin
Hye Ri Jung
Jihyun Kim
Bich Phuong Nguyen
Juran Kim
William Jo
author_facet Yeon Soo Kim
Hye-Jin Jin
Hye Ri Jung
Jihyun Kim
Bich Phuong Nguyen
Juran Kim
William Jo
author_sort Yeon Soo Kim
collection DOAJ
description Abstract TiO2 is the most widely used material for the electron transport layers (ETLs) because it is characterized by proper band alignment with light absorbers, adequate optical transmittance, and high electron mobility. There are two thermodynamically stable crystal phases of TiO2: anatase and rutile. However, understanding which phase is more effective as the ETL is still required. In this paper, we demonstrate the different effects of using epitaxial anatase TiO2 and epitaxial rutile TiO2 (both grown using pulsed laser deposition) as the ETL material on the electrical and optical properties. Epitaxial Nb-doped TiO2 layers were used as the common electrode material for the both epitaxial ETLs for which the crystalline structural analysis revealed high crystalline qualities and good coherency for both phases. By analyzing the recombination kinetics, the anatase phase shows a preferable performance in comparison with the rutile phase, although both epitaxial phases show remarkably reduced extrinsic recombination properties, such as trap-assisted recombination. This study demonstrates not only a better electron transporting performance of anatase phase but also reduced extrinsic recombination through epitaxy growth.
first_indexed 2024-12-18T04:06:23Z
format Article
id doaj.art-a18b9c2316624d4182a96e71e6c1da5e
institution Directory Open Access Journal
issn 2045-2322
language English
last_indexed 2024-12-18T04:06:23Z
publishDate 2021-03-01
publisher Nature Portfolio
record_format Article
series Scientific Reports
spelling doaj.art-a18b9c2316624d4182a96e71e6c1da5e2022-12-21T21:21:36ZengNature PortfolioScientific Reports2045-23222021-03-0111111010.1038/s41598-021-86422-9Reduced extrinsic recombination process in anatase and rutile TiO2 epitaxial thin films for efficient electron transport layersYeon Soo Kim0Hye-Jin Jin1Hye Ri Jung2Jihyun Kim3Bich Phuong Nguyen4Juran Kim5William Jo6Department of Physics and New and Renewable Energy Research Center (NREC), Ewha Womans UniversityDepartment of Physics and New and Renewable Energy Research Center (NREC), Ewha Womans UniversityDepartment of Physics and New and Renewable Energy Research Center (NREC), Ewha Womans UniversityDepartment of Physics and New and Renewable Energy Research Center (NREC), Ewha Womans UniversityDepartment of Physics and New and Renewable Energy Research Center (NREC), Ewha Womans UniversityDepartment of Physics and New and Renewable Energy Research Center (NREC), Ewha Womans UniversityDepartment of Physics and New and Renewable Energy Research Center (NREC), Ewha Womans UniversityAbstract TiO2 is the most widely used material for the electron transport layers (ETLs) because it is characterized by proper band alignment with light absorbers, adequate optical transmittance, and high electron mobility. There are two thermodynamically stable crystal phases of TiO2: anatase and rutile. However, understanding which phase is more effective as the ETL is still required. In this paper, we demonstrate the different effects of using epitaxial anatase TiO2 and epitaxial rutile TiO2 (both grown using pulsed laser deposition) as the ETL material on the electrical and optical properties. Epitaxial Nb-doped TiO2 layers were used as the common electrode material for the both epitaxial ETLs for which the crystalline structural analysis revealed high crystalline qualities and good coherency for both phases. By analyzing the recombination kinetics, the anatase phase shows a preferable performance in comparison with the rutile phase, although both epitaxial phases show remarkably reduced extrinsic recombination properties, such as trap-assisted recombination. This study demonstrates not only a better electron transporting performance of anatase phase but also reduced extrinsic recombination through epitaxy growth.https://doi.org/10.1038/s41598-021-86422-9
spellingShingle Yeon Soo Kim
Hye-Jin Jin
Hye Ri Jung
Jihyun Kim
Bich Phuong Nguyen
Juran Kim
William Jo
Reduced extrinsic recombination process in anatase and rutile TiO2 epitaxial thin films for efficient electron transport layers
Scientific Reports
title Reduced extrinsic recombination process in anatase and rutile TiO2 epitaxial thin films for efficient electron transport layers
title_full Reduced extrinsic recombination process in anatase and rutile TiO2 epitaxial thin films for efficient electron transport layers
title_fullStr Reduced extrinsic recombination process in anatase and rutile TiO2 epitaxial thin films for efficient electron transport layers
title_full_unstemmed Reduced extrinsic recombination process in anatase and rutile TiO2 epitaxial thin films for efficient electron transport layers
title_short Reduced extrinsic recombination process in anatase and rutile TiO2 epitaxial thin films for efficient electron transport layers
title_sort reduced extrinsic recombination process in anatase and rutile tio2 epitaxial thin films for efficient electron transport layers
url https://doi.org/10.1038/s41598-021-86422-9
work_keys_str_mv AT yeonsookim reducedextrinsicrecombinationprocessinanataseandrutiletio2epitaxialthinfilmsforefficientelectrontransportlayers
AT hyejinjin reducedextrinsicrecombinationprocessinanataseandrutiletio2epitaxialthinfilmsforefficientelectrontransportlayers
AT hyerijung reducedextrinsicrecombinationprocessinanataseandrutiletio2epitaxialthinfilmsforefficientelectrontransportlayers
AT jihyunkim reducedextrinsicrecombinationprocessinanataseandrutiletio2epitaxialthinfilmsforefficientelectrontransportlayers
AT bichphuongnguyen reducedextrinsicrecombinationprocessinanataseandrutiletio2epitaxialthinfilmsforefficientelectrontransportlayers
AT jurankim reducedextrinsicrecombinationprocessinanataseandrutiletio2epitaxialthinfilmsforefficientelectrontransportlayers
AT williamjo reducedextrinsicrecombinationprocessinanataseandrutiletio2epitaxialthinfilmsforefficientelectrontransportlayers