A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction
Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency noi...
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| Format: | Article |
| Language: | English |
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MDPI AG
2009-10-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/9/10/8336/ |
| _version_ | 1828350532564025344 |
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| author | Hsin Chen Sheng-Ren Chang |
| author_facet | Hsin Chen Sheng-Ren Chang |
| author_sort | Hsin Chen |
| collection | DOAJ |
| description | Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency noise. With a particular layout design, the conduction efficiency is further enhanced. Moreover, the ISFET is compatible with the standard CMOS technology. All materials above the gate-oxide are removed by simple, die-level post-CMOS process, allowing ions to modulate the lateral-bipolar current directly. By varying the gate-to-bulk voltage, the operation mode of the ISFET is controlled effectively, so is the noise performance measured and compared. Finally, the biasing conditions preferable for different low-noise applications are identified. Under the identified biasing condition, the signal-to-noise ratio of the ISFET as a pH sensor is proved to be improved by more than five times. |
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| format | Article |
| id | doaj.art-a1a30a522a9c4d049c1fde69be3dbd3a |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-14T01:26:32Z |
| publishDate | 2009-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-a1a30a522a9c4d049c1fde69be3dbd3a2022-12-22T02:20:25ZengMDPI AGSensors1424-82202009-10-019108336834810.3390/s91008336A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar ConductionHsin ChenSheng-Ren ChangIon-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency noise. With a particular layout design, the conduction efficiency is further enhanced. Moreover, the ISFET is compatible with the standard CMOS technology. All materials above the gate-oxide are removed by simple, die-level post-CMOS process, allowing ions to modulate the lateral-bipolar current directly. By varying the gate-to-bulk voltage, the operation mode of the ISFET is controlled effectively, so is the noise performance measured and compared. Finally, the biasing conditions preferable for different low-noise applications are identified. Under the identified biasing condition, the signal-to-noise ratio of the ISFET as a pH sensor is proved to be improved by more than five times.http://www.mdpi.com/1424-8220/9/10/8336/ISFETlow noiseCMOS-compatiblelateral-bipolar conduction |
| spellingShingle | Hsin Chen Sheng-Ren Chang A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction Sensors ISFET low noise CMOS-compatible lateral-bipolar conduction |
| title | A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction |
| title_full | A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction |
| title_fullStr | A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction |
| title_full_unstemmed | A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction |
| title_short | A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction |
| title_sort | cmos compatible low noise isfet based on high efficiency ion modulated lateral bipolar conduction |
| topic | ISFET low noise CMOS-compatible lateral-bipolar conduction |
| url | http://www.mdpi.com/1424-8220/9/10/8336/ |
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