Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

Amorphous metal oxide has been a popular choice for thin film material in recent years due to its high uniformity. The dielectric layer is one of the core materials of the thin film transistor (TFT), and it affects the ability of charges storage in TFT. There is a conflict between a high relative di...

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Autori principali: Huiyun Yang, Zhihao Liang, Xiao Fu, Zhuohui Xu, Honglong Ning, Xianzhe Liu, Jiajing Lin, Yaru Pan, Rihui Yao, Junbiao Peng
Natura: Articolo
Lingua:English
Pubblicazione: MDPI AG 2021-08-01
Serie:Membranes
Soggetti:
zirconium-yttrium-aluminum-magnesium-oxide
dielectric layer
amorphous metal oxide
thin film
solution method
Accesso online:https://www.mdpi.com/2077-0375/11/8/608

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https://www.mdpi.com/2077-0375/11/8/608

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