Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers

In this paper, we present the methodology for precise calibration of the Molecular Beam Epitaxy (MBE) growth process and achieving run-to-run stability of growth parameters. We present the analysis of the influence of fluxes stability during the growth of long wavelength quantum cascade laser struct...

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Main Authors: Piotr Gutowski, Iwona Sankowska, Maciej Bugajski, Grzegorz Sobczak, Aleksandr Kuźmicz, Kamil Pierściński
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/13/9/1341
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author Piotr Gutowski
Iwona Sankowska
Maciej Bugajski
Grzegorz Sobczak
Aleksandr Kuźmicz
Kamil Pierściński
author_facet Piotr Gutowski
Iwona Sankowska
Maciej Bugajski
Grzegorz Sobczak
Aleksandr Kuźmicz
Kamil Pierściński
author_sort Piotr Gutowski
collection DOAJ
description In this paper, we present the methodology for precise calibration of the Molecular Beam Epitaxy (MBE) growth process and achieving run-to-run stability of growth parameters. We present the analysis of the influence of fluxes stability during the growth of long wavelength quantum cascade laser structures designed for the range λ ~ 12–16 µm on wavelength accuracy with respect to desired emission wavelength. The active region of the lasers has a complex structure of nanometer thickness In<sub>x</sub>Ga<sub>1−x</sub>As/In<sub>y</sub>Al<sub>1−y</sub>As superlattice. As a consequence, the compositional and thickness control of the structure via bulk growth parameters is rather difficult. To deal with this problem, we employ a methodology based on double-superlattice test structures that precede the growth of the actual structures. The test structures are analyzed by High Resolution X-ray Diffraction, which allows calibration of the growth of the complex active region of quantum cascade laser structures. We also theoretically studied the effect of individual flux changes on the emission wavelength and gain parameters of the laser. The results of simulations allow for the determination of flux stability tolerance, preserving acceptable parameters of the laser and providing means of emission wavelength control. The proposed methodology was verified by the growth of laser structures for emission at around 13.5 μm.
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spelling doaj.art-a23d08a963004199b8bf803d81c87f7f2023-11-19T10:09:22ZengMDPI AGCrystals2073-43522023-09-01139134110.3390/cryst13091341Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade LasersPiotr Gutowski0Iwona Sankowska1Maciej Bugajski2Grzegorz Sobczak3Aleksandr Kuźmicz4Kamil Pierściński5Łukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warszawa, PolandŁukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warszawa, PolandŁukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warszawa, PolandŁukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warszawa, PolandŁukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warszawa, PolandŁukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warszawa, PolandIn this paper, we present the methodology for precise calibration of the Molecular Beam Epitaxy (MBE) growth process and achieving run-to-run stability of growth parameters. We present the analysis of the influence of fluxes stability during the growth of long wavelength quantum cascade laser structures designed for the range λ ~ 12–16 µm on wavelength accuracy with respect to desired emission wavelength. The active region of the lasers has a complex structure of nanometer thickness In<sub>x</sub>Ga<sub>1−x</sub>As/In<sub>y</sub>Al<sub>1−y</sub>As superlattice. As a consequence, the compositional and thickness control of the structure via bulk growth parameters is rather difficult. To deal with this problem, we employ a methodology based on double-superlattice test structures that precede the growth of the actual structures. The test structures are analyzed by High Resolution X-ray Diffraction, which allows calibration of the growth of the complex active region of quantum cascade laser structures. We also theoretically studied the effect of individual flux changes on the emission wavelength and gain parameters of the laser. The results of simulations allow for the determination of flux stability tolerance, preserving acceptable parameters of the laser and providing means of emission wavelength control. The proposed methodology was verified by the growth of laser structures for emission at around 13.5 μm.https://www.mdpi.com/2073-4352/13/9/1341quantum cascade lasermolecular beam epitaxyInAlAs/InGaAs
spellingShingle Piotr Gutowski
Iwona Sankowska
Maciej Bugajski
Grzegorz Sobczak
Aleksandr Kuźmicz
Kamil Pierściński
Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers
Crystals
quantum cascade laser
molecular beam epitaxy
InAlAs/InGaAs
title Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers
title_full Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers
title_fullStr Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers
title_full_unstemmed Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers
title_short Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers
title_sort calibration technique for mbe growth of long wavelength inalas ingaas quantum cascade lasers
topic quantum cascade laser
molecular beam epitaxy
InAlAs/InGaAs
url https://www.mdpi.com/2073-4352/13/9/1341
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