Fabrication and origin of asymmetric polyvinylidene fluoride-carbon nanotube/cyanate ester materials with high dielectric constant and low dielectric loss through building double-layered structure
High dielectric loss has been the biggest sticky problem for high-k conductor/polymer composites. Herein, a new asymmetric material consisting of one layer of β-phase poly(vinylidene fluoride) (PVDF) and another layer of carboxylated carbon nanotube (eCNT)/cyanate ester (CE) composite was fabricated...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2016-12-01
|
| Series: | High Voltage |
| Subjects: | |
| Online Access: | https://digital-library.theiet.org/content/journals/10.1049/hve.2016.0064 |
| _version_ | 1818426249749463040 |
|---|---|
| author | Longhui Zheng Li Yuan Li Yuan Qingbao Guan Qingbao Guan Aijuan Gu Aijuan Gu Guozheng Liang Guozheng Liang |
| author_facet | Longhui Zheng Li Yuan Li Yuan Qingbao Guan Qingbao Guan Aijuan Gu Aijuan Gu Guozheng Liang Guozheng Liang |
| author_sort | Longhui Zheng |
| collection | DOAJ |
| description | High dielectric loss has been the biggest sticky problem for high-k conductor/polymer composites. Herein, a new asymmetric material consisting of one layer of β-phase poly(vinylidene fluoride) (PVDF) and another layer of carboxylated carbon nanotube (eCNT)/cyanate ester (CE) composite was fabricated, coded as PVDFx–eCNTq/CE, where x is the thickness of PVDF layer ranging from 3 to 70 μm, q is the loading of eCNTs (f), taking values of 1.2 and 1.7 wt%. The influences of f and x values on dielectric properties and breakdown strengths of PVDF–eCNT/CE materials were systematically studied. When f is smaller than the percolation threshold (f(c)) of eCNT/CE (f(c) = 1.6 wt%), the corresponding PVDF–eCNT1.2/CE materials have similar conductive and dielectric properties as eCNT1.2/CE composite. When f > f(c), all PVDF–eCNT1.7/CE materials have much lower dielectric loss than eCNT1.7/CE, while with suitable thickness of PVDF layer (<70 μm), PVDF–eCNT/CE materials have significantly improved dielectric constants and breakdown strengths. For the PVDF–eCNT1.7/CE material of which the thickness of PVDF layer is 5 μm, its dielectric constant at 1 Hz is 1699, about ten times of that of eCNT1.7/CE, while the dielectric loss is only 2.31 × 10^−2 times of that of the latter. The origin behind was intensively studied in terms of space charge distribution. |
| first_indexed | 2024-12-14T14:26:50Z |
| format | Article |
| id | doaj.art-a26189efd9094bf1bd2bd7f6c63a690f |
| institution | Directory Open Access Journal |
| issn | 2397-7264 |
| language | English |
| last_indexed | 2024-12-14T14:26:50Z |
| publishDate | 2016-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | High Voltage |
| spelling | doaj.art-a26189efd9094bf1bd2bd7f6c63a690f2022-12-21T22:57:56ZengWileyHigh Voltage2397-72642016-12-0110.1049/hve.2016.0064HVE.2016.0064Fabrication and origin of asymmetric polyvinylidene fluoride-carbon nanotube/cyanate ester materials with high dielectric constant and low dielectric loss through building double-layered structureLonghui Zheng0Li Yuan1Li Yuan2Qingbao Guan3Qingbao Guan4Aijuan Gu5Aijuan Gu6Guozheng Liang7Guozheng Liang8Soochow UniversitySoochow UniversitySoochow UniversitySoochow UniversitySoochow UniversitySoochow UniversitySoochow UniversitySoochow UniversitySoochow UniversityHigh dielectric loss has been the biggest sticky problem for high-k conductor/polymer composites. Herein, a new asymmetric material consisting of one layer of β-phase poly(vinylidene fluoride) (PVDF) and another layer of carboxylated carbon nanotube (eCNT)/cyanate ester (CE) composite was fabricated, coded as PVDFx–eCNTq/CE, where x is the thickness of PVDF layer ranging from 3 to 70 μm, q is the loading of eCNTs (f), taking values of 1.2 and 1.7 wt%. The influences of f and x values on dielectric properties and breakdown strengths of PVDF–eCNT/CE materials were systematically studied. When f is smaller than the percolation threshold (f(c)) of eCNT/CE (f(c) = 1.6 wt%), the corresponding PVDF–eCNT1.2/CE materials have similar conductive and dielectric properties as eCNT1.2/CE composite. When f > f(c), all PVDF–eCNT1.7/CE materials have much lower dielectric loss than eCNT1.7/CE, while with suitable thickness of PVDF layer (<70 μm), PVDF–eCNT/CE materials have significantly improved dielectric constants and breakdown strengths. For the PVDF–eCNT1.7/CE material of which the thickness of PVDF layer is 5 μm, its dielectric constant at 1 Hz is 1699, about ten times of that of eCNT1.7/CE, while the dielectric loss is only 2.31 × 10^−2 times of that of the latter. The origin behind was intensively studied in terms of space charge distribution.https://digital-library.theiet.org/content/journals/10.1049/hve.2016.0064polymerscarbon nanotubespermittivitydielectric losseselectric breakdownspace chargematerials preparationnanocompositespolyvinylidene fluoride-carbon nanotube-cyanate ester compositedielectric constantdielectric lossdouble-layered structurebreakdown strengthconductive propertiesasymmetric epoxidised compositespace charge distributionC |
| spellingShingle | Longhui Zheng Li Yuan Li Yuan Qingbao Guan Qingbao Guan Aijuan Gu Aijuan Gu Guozheng Liang Guozheng Liang Fabrication and origin of asymmetric polyvinylidene fluoride-carbon nanotube/cyanate ester materials with high dielectric constant and low dielectric loss through building double-layered structure High Voltage polymers carbon nanotubes permittivity dielectric losses electric breakdown space charge materials preparation nanocomposites polyvinylidene fluoride-carbon nanotube-cyanate ester composite dielectric constant dielectric loss double-layered structure breakdown strength conductive properties asymmetric epoxidised composite space charge distribution C |
| title | Fabrication and origin of asymmetric polyvinylidene fluoride-carbon nanotube/cyanate ester materials with high dielectric constant and low dielectric loss through building double-layered structure |
| title_full | Fabrication and origin of asymmetric polyvinylidene fluoride-carbon nanotube/cyanate ester materials with high dielectric constant and low dielectric loss through building double-layered structure |
| title_fullStr | Fabrication and origin of asymmetric polyvinylidene fluoride-carbon nanotube/cyanate ester materials with high dielectric constant and low dielectric loss through building double-layered structure |
| title_full_unstemmed | Fabrication and origin of asymmetric polyvinylidene fluoride-carbon nanotube/cyanate ester materials with high dielectric constant and low dielectric loss through building double-layered structure |
| title_short | Fabrication and origin of asymmetric polyvinylidene fluoride-carbon nanotube/cyanate ester materials with high dielectric constant and low dielectric loss through building double-layered structure |
| title_sort | fabrication and origin of asymmetric polyvinylidene fluoride carbon nanotube cyanate ester materials with high dielectric constant and low dielectric loss through building double layered structure |
| topic | polymers carbon nanotubes permittivity dielectric losses electric breakdown space charge materials preparation nanocomposites polyvinylidene fluoride-carbon nanotube-cyanate ester composite dielectric constant dielectric loss double-layered structure breakdown strength conductive properties asymmetric epoxidised composite space charge distribution C |
| url | https://digital-library.theiet.org/content/journals/10.1049/hve.2016.0064 |
| work_keys_str_mv | AT longhuizheng fabricationandoriginofasymmetricpolyvinylidenefluoridecarbonnanotubecyanateestermaterialswithhighdielectricconstantandlowdielectriclossthroughbuildingdoublelayeredstructure AT liyuan fabricationandoriginofasymmetricpolyvinylidenefluoridecarbonnanotubecyanateestermaterialswithhighdielectricconstantandlowdielectriclossthroughbuildingdoublelayeredstructure AT liyuan fabricationandoriginofasymmetricpolyvinylidenefluoridecarbonnanotubecyanateestermaterialswithhighdielectricconstantandlowdielectriclossthroughbuildingdoublelayeredstructure AT qingbaoguan fabricationandoriginofasymmetricpolyvinylidenefluoridecarbonnanotubecyanateestermaterialswithhighdielectricconstantandlowdielectriclossthroughbuildingdoublelayeredstructure AT qingbaoguan fabricationandoriginofasymmetricpolyvinylidenefluoridecarbonnanotubecyanateestermaterialswithhighdielectricconstantandlowdielectriclossthroughbuildingdoublelayeredstructure AT aijuangu fabricationandoriginofasymmetricpolyvinylidenefluoridecarbonnanotubecyanateestermaterialswithhighdielectricconstantandlowdielectriclossthroughbuildingdoublelayeredstructure AT aijuangu fabricationandoriginofasymmetricpolyvinylidenefluoridecarbonnanotubecyanateestermaterialswithhighdielectricconstantandlowdielectriclossthroughbuildingdoublelayeredstructure AT guozhengliang fabricationandoriginofasymmetricpolyvinylidenefluoridecarbonnanotubecyanateestermaterialswithhighdielectricconstantandlowdielectriclossthroughbuildingdoublelayeredstructure AT guozhengliang fabricationandoriginofasymmetricpolyvinylidenefluoridecarbonnanotubecyanateestermaterialswithhighdielectricconstantandlowdielectriclossthroughbuildingdoublelayeredstructure |