TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires
Controlling the shape and internal strain of nanowires (NWs) is critical for their safe and reliable use and for the exploration of novel functionalities of nanodevices. In this work, transmission electron microscopy was employed to examine bent Si NWs prepared by asymmetric electron-beam evaporatio...
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MDPI AG
2022-10-01
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| Online Access: | https://www.mdpi.com/1996-1944/15/20/7077 |
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| author | Yuan Zang Lianbi Li Jichao Hu Lei Li Zelong Li Zebin Li Song Feng Guoqing Zhang Caijuan Xia Hongbin Pu |
| author_facet | Yuan Zang Lianbi Li Jichao Hu Lei Li Zelong Li Zebin Li Song Feng Guoqing Zhang Caijuan Xia Hongbin Pu |
| author_sort | Yuan Zang |
| collection | DOAJ |
| description | Controlling the shape and internal strain of nanowires (NWs) is critical for their safe and reliable use and for the exploration of novel functionalities of nanodevices. In this work, transmission electron microscopy was employed to examine bent Si NWs prepared by asymmetric electron-beam evaporation. The asymmetric deposition of Cr caused the formation of nanosized amorphous-Si domains; the non-crystallinity of the Si NWs was controlled by the bending radius. No other intermediate crystalline phase was present during the crystalline-to-amorphous transition, indicating a direct phase transition from the original crystalline phase to the amorphous phase. Moreover, amorphous microstructures caused by compressive stress, such as amorphous Cr domains and boxes, were also observed in the asymmetric Cr layer used to induce bending, and the local non-crystallinity of Cr was lower than that of Si under the same bending radius. |
| first_indexed | 2024-03-09T12:11:59Z |
| format | Article |
| id | doaj.art-a262b735fc4c434d93d7d602859211e0 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T12:11:59Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-a262b735fc4c434d93d7d602859211e02023-11-30T22:51:16ZengMDPI AGMaterials1996-19442022-10-011520707710.3390/ma15207077TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon NanowiresYuan Zang0Lianbi Li1Jichao Hu2Lei Li3Zelong Li4Zebin Li5Song Feng6Guoqing Zhang7Caijuan Xia8Hongbin Pu9Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an 710048, ChinaDepartment of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an 710048, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an 710048, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an 710048, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an 710048, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an 710048, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an 710048, ChinaDepartment of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, ChinaControlling the shape and internal strain of nanowires (NWs) is critical for their safe and reliable use and for the exploration of novel functionalities of nanodevices. In this work, transmission electron microscopy was employed to examine bent Si NWs prepared by asymmetric electron-beam evaporation. The asymmetric deposition of Cr caused the formation of nanosized amorphous-Si domains; the non-crystallinity of the Si NWs was controlled by the bending radius. No other intermediate crystalline phase was present during the crystalline-to-amorphous transition, indicating a direct phase transition from the original crystalline phase to the amorphous phase. Moreover, amorphous microstructures caused by compressive stress, such as amorphous Cr domains and boxes, were also observed in the asymmetric Cr layer used to induce bending, and the local non-crystallinity of Cr was lower than that of Si under the same bending radius.https://www.mdpi.com/1996-1944/15/20/7077silicon nanowireselectron microscopyphase transformationbendingsemiconductors |
| spellingShingle | Yuan Zang Lianbi Li Jichao Hu Lei Li Zelong Li Zebin Li Song Feng Guoqing Zhang Caijuan Xia Hongbin Pu TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires Materials silicon nanowires electron microscopy phase transformation bending semiconductors |
| title | TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires |
| title_full | TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires |
| title_fullStr | TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires |
| title_full_unstemmed | TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires |
| title_short | TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires |
| title_sort | tem investigation of asymmetric deposition driven crystalline to amorphous transition in silicon nanowires |
| topic | silicon nanowires electron microscopy phase transformation bending semiconductors |
| url | https://www.mdpi.com/1996-1944/15/20/7077 |
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