The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing
Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4867091 |
| _version_ | 1818909773001654272 |
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| author | Yonghui Zhang Tongbo Wei Junxi Wang Ding Lan Yu Chen Qiang Hu Hongxi Lu Jinmin Li |
| author_facet | Yonghui Zhang Tongbo Wei Junxi Wang Ding Lan Yu Chen Qiang Hu Hongxi Lu Jinmin Li |
| author_sort | Yonghui Zhang |
| collection | DOAJ |
| description | Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period. |
| first_indexed | 2024-12-19T22:32:14Z |
| format | Article |
| id | doaj.art-a26668bac53c4ad4bdd4af456ca584e1 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-19T22:32:14Z |
| publishDate | 2014-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-a26668bac53c4ad4bdd4af456ca584e12022-12-21T20:03:19ZengAIP Publishing LLCAIP Advances2158-32262014-02-0142027123027123-610.1063/1.4867091025402ADVThe improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacingYonghui Zhang0Tongbo Wei1Junxi Wang2Ding Lan3Yu Chen4Qiang Hu5Hongxi Lu6Jinmin Li7State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, ChinaState Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, ChinaState Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, ChinaNational Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080, ChinaState Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, ChinaState Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, ChinaState Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, ChinaState Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, ChinaSelf-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.http://dx.doi.org/10.1063/1.4867091 |
| spellingShingle | Yonghui Zhang Tongbo Wei Junxi Wang Ding Lan Yu Chen Qiang Hu Hongxi Lu Jinmin Li The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing AIP Advances |
| title | The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing |
| title_full | The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing |
| title_fullStr | The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing |
| title_full_unstemmed | The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing |
| title_short | The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing |
| title_sort | improvement of gan based light emitting diodes using nanopatterned sapphire substrate with small pattern spacing |
| url | http://dx.doi.org/10.1063/1.4867091 |
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