Chiral and helical states in selective-area epitaxial heterostructure
Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological el...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-08-01
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| Series: | Communications Physics |
| Online Access: | https://doi.org/10.1038/s42005-023-01328-4 |
| _version_ | 1797559193262096384 |
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| author | Huimin Sun Yu Huang Mengyun He Yu Fu Sikang Zheng Bin Zhang Chen Wang Qing Lin He |
| author_facet | Huimin Sun Yu Huang Mengyun He Yu Fu Sikang Zheng Bin Zhang Chen Wang Qing Lin He |
| author_sort | Huimin Sun |
| collection | DOAJ |
| description | Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension. |
| first_indexed | 2024-03-10T17:41:56Z |
| format | Article |
| id | doaj.art-a274a3a11c9e4c4d8ab1b02550bbeeab |
| institution | Directory Open Access Journal |
| issn | 2399-3650 |
| language | English |
| last_indexed | 2024-03-10T17:41:56Z |
| publishDate | 2023-08-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Communications Physics |
| spelling | doaj.art-a274a3a11c9e4c4d8ab1b02550bbeeab2023-11-20T09:39:29ZengNature PortfolioCommunications Physics2399-36502023-08-01611810.1038/s42005-023-01328-4Chiral and helical states in selective-area epitaxial heterostructureHuimin Sun0Yu Huang1Mengyun He2Yu Fu3Sikang Zheng4Bin Zhang5Chen Wang6Qing Lin He7International Center for Quantum Materials, School of Physics, Peking UniversityInternational Center for Quantum Materials, School of Physics, Peking UniversityInternational Center for Quantum Materials, School of Physics, Peking UniversityInternational Center for Quantum Materials, School of Physics, Peking UniversityAnalytical and Testing Center, Chongqing UniversityAnalytical and Testing Center, Chongqing UniversityCenter for Joint Quantum Studies and Department of Physics, School of Science, Tianjin UniversityInternational Center for Quantum Materials, School of Physics, Peking UniversityAbstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension.https://doi.org/10.1038/s42005-023-01328-4 |
| spellingShingle | Huimin Sun Yu Huang Mengyun He Yu Fu Sikang Zheng Bin Zhang Chen Wang Qing Lin He Chiral and helical states in selective-area epitaxial heterostructure Communications Physics |
| title | Chiral and helical states in selective-area epitaxial heterostructure |
| title_full | Chiral and helical states in selective-area epitaxial heterostructure |
| title_fullStr | Chiral and helical states in selective-area epitaxial heterostructure |
| title_full_unstemmed | Chiral and helical states in selective-area epitaxial heterostructure |
| title_short | Chiral and helical states in selective-area epitaxial heterostructure |
| title_sort | chiral and helical states in selective area epitaxial heterostructure |
| url | https://doi.org/10.1038/s42005-023-01328-4 |
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