Low Resistance Asymmetric III-Nitride Tunnel Junctions Designed by Machine Learning
The tunnel junction (TJ) is a crucial structure for numerous III-nitride devices. A fundamental challenge for TJ design is to minimize the TJ resistance at high current densities. In this work, we propose the asymmetric p-AlGaN/i-InGaN/n-AlGaN TJ structure for the first time. P-AlGaN/i-InGaN/n-AlGaN...
Main Authors: | Rongyu Lin, Peng Han, Yue Wang, Ronghui Lin, Yi Lu, Zhiyuan Liu, Xiangliang Zhang, Xiaohang Li |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-09-01
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Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/11/10/2466 |
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