Investigation of the Charge-Transfer Between Ga-Doped ZnO Nanoparticles and Molecules Using Surface-Enhanced Raman Scattering: Doping Induced Band-Gap Shrinkage
Semiconductor nanomaterial is a kind of important enhancement substrate in surface-enhanced Raman scattering (SERS), and the charge-transfer (CT) process contributes dominantly when they are used as the enhancement substrate for SERS. Doping has significant effect on the CT process of semiconductor...
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Frontiers Media S.A.
2019-03-01
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| Series: | Frontiers in Chemistry |
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| Online Access: | https://www.frontiersin.org/article/10.3389/fchem.2019.00144/full |
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| author | Peng Li Peng Li Xiaolei Wang Xiaolei Wang Xiaolei Zhang Xiaolei Zhang Lixia Zhang Xuwei Yang Bing Zhao Bing Zhao |
| author_facet | Peng Li Peng Li Xiaolei Wang Xiaolei Wang Xiaolei Zhang Xiaolei Zhang Lixia Zhang Xuwei Yang Bing Zhao Bing Zhao |
| author_sort | Peng Li |
| collection | DOAJ |
| description | Semiconductor nanomaterial is a kind of important enhancement substrate in surface-enhanced Raman scattering (SERS), and the charge-transfer (CT) process contributes dominantly when they are used as the enhancement substrate for SERS. Doping has significant effect on the CT process of semiconductor nanomaterials. Yet till now, none attempts have been made to explore how doping affects the CT process between the semiconductor and probe molecules. For the first time, this paper investigates the effect of gallium (Ga) doping on the CT process between ZnO nanoparticles and 4-mercaptobenzoic acid (4-MBA) monolayer. In this paper, a series of Ga-doped ZnO nanoparticles (NPs) with various ratio of Ga and Zn are synthesized and their SERS performances are studied. The study shows that the doped Ga can cause the band gap shrinkage of ZnO NPs and then affect the CT resonance process form the valence band (VB) of ZnO NPs to the LUMO of 4-MBA molecules. The band gap of Ga-doped ZnO NPs is gradually narrowed with the increasing doping concentration, and a minimum value (3.16 eV) is reached with the Ga and Zn ratio of 3.8%, resulting in the maximum degree of CT. This work investigates the effects of doping induced band gap shrinkage on CT using SERS and provides a new insight on improving the SERS performance of semiconductor NPs. |
| first_indexed | 2024-12-12T08:19:17Z |
| format | Article |
| id | doaj.art-a27dc7569c034608ae15e74742c51b36 |
| institution | Directory Open Access Journal |
| issn | 2296-2646 |
| language | English |
| last_indexed | 2024-12-12T08:19:17Z |
| publishDate | 2019-03-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Chemistry |
| spelling | doaj.art-a27dc7569c034608ae15e74742c51b362022-12-22T00:31:28ZengFrontiers Media S.A.Frontiers in Chemistry2296-26462019-03-01710.3389/fchem.2019.00144448799Investigation of the Charge-Transfer Between Ga-Doped ZnO Nanoparticles and Molecules Using Surface-Enhanced Raman Scattering: Doping Induced Band-Gap ShrinkagePeng Li0Peng Li1Xiaolei Wang2Xiaolei Wang3Xiaolei Zhang4Xiaolei Zhang5Lixia Zhang6Xuwei Yang7Bing Zhao8Bing Zhao9State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, ChinaCollege of Chemistry, Jilin University, Changchun, ChinaState Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, ChinaCollege of Chemistry, Jilin University, Changchun, ChinaState Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, ChinaCollege of Chemistry, Jilin University, Changchun, ChinaCollege of Chemistry, Jilin University, Changchun, ChinaCollege of Chemistry, Jilin University, Changchun, ChinaState Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, ChinaCollege of Chemistry, Jilin University, Changchun, ChinaSemiconductor nanomaterial is a kind of important enhancement substrate in surface-enhanced Raman scattering (SERS), and the charge-transfer (CT) process contributes dominantly when they are used as the enhancement substrate for SERS. Doping has significant effect on the CT process of semiconductor nanomaterials. Yet till now, none attempts have been made to explore how doping affects the CT process between the semiconductor and probe molecules. For the first time, this paper investigates the effect of gallium (Ga) doping on the CT process between ZnO nanoparticles and 4-mercaptobenzoic acid (4-MBA) monolayer. In this paper, a series of Ga-doped ZnO nanoparticles (NPs) with various ratio of Ga and Zn are synthesized and their SERS performances are studied. The study shows that the doped Ga can cause the band gap shrinkage of ZnO NPs and then affect the CT resonance process form the valence band (VB) of ZnO NPs to the LUMO of 4-MBA molecules. The band gap of Ga-doped ZnO NPs is gradually narrowed with the increasing doping concentration, and a minimum value (3.16 eV) is reached with the Ga and Zn ratio of 3.8%, resulting in the maximum degree of CT. This work investigates the effects of doping induced band gap shrinkage on CT using SERS and provides a new insight on improving the SERS performance of semiconductor NPs.https://www.frontiersin.org/article/10.3389/fchem.2019.00144/fullcharge-transferGa-doped ZnOSERS4-MBAband gap shrinkage |
| spellingShingle | Peng Li Peng Li Xiaolei Wang Xiaolei Wang Xiaolei Zhang Xiaolei Zhang Lixia Zhang Xuwei Yang Bing Zhao Bing Zhao Investigation of the Charge-Transfer Between Ga-Doped ZnO Nanoparticles and Molecules Using Surface-Enhanced Raman Scattering: Doping Induced Band-Gap Shrinkage Frontiers in Chemistry charge-transfer Ga-doped ZnO SERS 4-MBA band gap shrinkage |
| title | Investigation of the Charge-Transfer Between Ga-Doped ZnO Nanoparticles and Molecules Using Surface-Enhanced Raman Scattering: Doping Induced Band-Gap Shrinkage |
| title_full | Investigation of the Charge-Transfer Between Ga-Doped ZnO Nanoparticles and Molecules Using Surface-Enhanced Raman Scattering: Doping Induced Band-Gap Shrinkage |
| title_fullStr | Investigation of the Charge-Transfer Between Ga-Doped ZnO Nanoparticles and Molecules Using Surface-Enhanced Raman Scattering: Doping Induced Band-Gap Shrinkage |
| title_full_unstemmed | Investigation of the Charge-Transfer Between Ga-Doped ZnO Nanoparticles and Molecules Using Surface-Enhanced Raman Scattering: Doping Induced Band-Gap Shrinkage |
| title_short | Investigation of the Charge-Transfer Between Ga-Doped ZnO Nanoparticles and Molecules Using Surface-Enhanced Raman Scattering: Doping Induced Band-Gap Shrinkage |
| title_sort | investigation of the charge transfer between ga doped zno nanoparticles and molecules using surface enhanced raman scattering doping induced band gap shrinkage |
| topic | charge-transfer Ga-doped ZnO SERS 4-MBA band gap shrinkage |
| url | https://www.frontiersin.org/article/10.3389/fchem.2019.00144/full |
| work_keys_str_mv | AT pengli investigationofthechargetransferbetweengadopedznonanoparticlesandmoleculesusingsurfaceenhancedramanscatteringdopinginducedbandgapshrinkage AT pengli investigationofthechargetransferbetweengadopedznonanoparticlesandmoleculesusingsurfaceenhancedramanscatteringdopinginducedbandgapshrinkage AT xiaoleiwang investigationofthechargetransferbetweengadopedznonanoparticlesandmoleculesusingsurfaceenhancedramanscatteringdopinginducedbandgapshrinkage AT xiaoleiwang investigationofthechargetransferbetweengadopedznonanoparticlesandmoleculesusingsurfaceenhancedramanscatteringdopinginducedbandgapshrinkage AT xiaoleizhang investigationofthechargetransferbetweengadopedznonanoparticlesandmoleculesusingsurfaceenhancedramanscatteringdopinginducedbandgapshrinkage AT xiaoleizhang investigationofthechargetransferbetweengadopedznonanoparticlesandmoleculesusingsurfaceenhancedramanscatteringdopinginducedbandgapshrinkage AT lixiazhang investigationofthechargetransferbetweengadopedznonanoparticlesandmoleculesusingsurfaceenhancedramanscatteringdopinginducedbandgapshrinkage AT xuweiyang investigationofthechargetransferbetweengadopedznonanoparticlesandmoleculesusingsurfaceenhancedramanscatteringdopinginducedbandgapshrinkage AT bingzhao investigationofthechargetransferbetweengadopedznonanoparticlesandmoleculesusingsurfaceenhancedramanscatteringdopinginducedbandgapshrinkage AT bingzhao investigationofthechargetransferbetweengadopedznonanoparticlesandmoleculesusingsurfaceenhancedramanscatteringdopinginducedbandgapshrinkage |