Realization of cost-effective and high-performance solar-blind ultraviolet photodetectors based on amorphous Ga2O3 prepared at room temperature
The solar-blind photodetectors based on amorphous Ga2O3 (a-Ga2O3) are attractive in recent years due to their simple fabrication process and good compatibility with different substrates. Herein, the cost-effective and high-performance thin-film transistor (TFT) type solar-blind photodetector based o...
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| Format: | Article |
| Language: | English |
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Elsevier
2022-12-01
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| Series: | Materials Today Advances |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590049822001205 |
| _version_ | 1811187727431892992 |
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| author | Yifei Wang Yixin Xue Jie Su Zhenhua Lin Jincheng Zhang Jingjing Chang Yue Hao |
| author_facet | Yifei Wang Yixin Xue Jie Su Zhenhua Lin Jincheng Zhang Jingjing Chang Yue Hao |
| author_sort | Yifei Wang |
| collection | DOAJ |
| description | The solar-blind photodetectors based on amorphous Ga2O3 (a-Ga2O3) are attractive in recent years due to their simple fabrication process and good compatibility with different substrates. Herein, the cost-effective and high-performance thin-film transistor (TFT) type solar-blind photodetector based on a-Ga2O3 was realized successfully at room temperature without post-annealing treatment. The a-Ga2O3 phototransistor showed excellent performance under weak ultraviolet (UV) light illumination (30 μW/cm2). In addition to the low dark current (Idark = 7.12 pA), the optimized a-Ga2O3 phototransistor showed a high response to ultraviolet light. The photo-to-dark current ratio (PDCR) reached up to 4.79 × 105 and the photoresponsivity (R) was 151.56 A/W. Meanwhile, the photo-detectivity (D∗) and external quantum efficiency (EQE) were 2.75 × 1015 Jones and 7.38 × 104%, respectively. After being treated with the polyethyleneimine ethoxylated (PEIE) electron-donating layer, the photocurrent of the PEIE/a-Ga2O3 based phototransistor increased so that R and EQE were enlarged up to 206.22 A/W and 1.004 × 105% respectively. Such a-Ga2O3 solar-blind photodetector provides the avenue to develop the inexpensive and high-performance Ga2O3-based solar-blind photodetector. |
| first_indexed | 2024-04-11T14:08:21Z |
| format | Article |
| id | doaj.art-a2e5101011174f408ecb203dd24c831b |
| institution | Directory Open Access Journal |
| issn | 2590-0498 |
| language | English |
| last_indexed | 2024-04-11T14:08:21Z |
| publishDate | 2022-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials Today Advances |
| spelling | doaj.art-a2e5101011174f408ecb203dd24c831b2022-12-22T04:19:49ZengElsevierMaterials Today Advances2590-04982022-12-0116100324Realization of cost-effective and high-performance solar-blind ultraviolet photodetectors based on amorphous Ga2O3 prepared at room temperatureYifei Wang0Yixin Xue1Jie Su2Zhenhua Lin3Jincheng Zhang4Jingjing Chang5Yue Hao6State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, China; Advanced Interdisciplinary Research Center for Flexible Electronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, China; Advanced Interdisciplinary Research Center for Flexible Electronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, China; Advanced Interdisciplinary Research Center for Flexible Electronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, China; Advanced Interdisciplinary Research Center for Flexible Electronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, China; Corresponding author. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, China.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, ChinaThe solar-blind photodetectors based on amorphous Ga2O3 (a-Ga2O3) are attractive in recent years due to their simple fabrication process and good compatibility with different substrates. Herein, the cost-effective and high-performance thin-film transistor (TFT) type solar-blind photodetector based on a-Ga2O3 was realized successfully at room temperature without post-annealing treatment. The a-Ga2O3 phototransistor showed excellent performance under weak ultraviolet (UV) light illumination (30 μW/cm2). In addition to the low dark current (Idark = 7.12 pA), the optimized a-Ga2O3 phototransistor showed a high response to ultraviolet light. The photo-to-dark current ratio (PDCR) reached up to 4.79 × 105 and the photoresponsivity (R) was 151.56 A/W. Meanwhile, the photo-detectivity (D∗) and external quantum efficiency (EQE) were 2.75 × 1015 Jones and 7.38 × 104%, respectively. After being treated with the polyethyleneimine ethoxylated (PEIE) electron-donating layer, the photocurrent of the PEIE/a-Ga2O3 based phototransistor increased so that R and EQE were enlarged up to 206.22 A/W and 1.004 × 105% respectively. Such a-Ga2O3 solar-blind photodetector provides the avenue to develop the inexpensive and high-performance Ga2O3-based solar-blind photodetector.http://www.sciencedirect.com/science/article/pii/S2590049822001205Amorphous Ga2O3Low-costSolar-blind phototransistorsElectron-donating layerMagnetron sputtering |
| spellingShingle | Yifei Wang Yixin Xue Jie Su Zhenhua Lin Jincheng Zhang Jingjing Chang Yue Hao Realization of cost-effective and high-performance solar-blind ultraviolet photodetectors based on amorphous Ga2O3 prepared at room temperature Materials Today Advances Amorphous Ga2O3 Low-cost Solar-blind phototransistors Electron-donating layer Magnetron sputtering |
| title | Realization of cost-effective and high-performance solar-blind ultraviolet photodetectors based on amorphous Ga2O3 prepared at room temperature |
| title_full | Realization of cost-effective and high-performance solar-blind ultraviolet photodetectors based on amorphous Ga2O3 prepared at room temperature |
| title_fullStr | Realization of cost-effective and high-performance solar-blind ultraviolet photodetectors based on amorphous Ga2O3 prepared at room temperature |
| title_full_unstemmed | Realization of cost-effective and high-performance solar-blind ultraviolet photodetectors based on amorphous Ga2O3 prepared at room temperature |
| title_short | Realization of cost-effective and high-performance solar-blind ultraviolet photodetectors based on amorphous Ga2O3 prepared at room temperature |
| title_sort | realization of cost effective and high performance solar blind ultraviolet photodetectors based on amorphous ga2o3 prepared at room temperature |
| topic | Amorphous Ga2O3 Low-cost Solar-blind phototransistors Electron-donating layer Magnetron sputtering |
| url | http://www.sciencedirect.com/science/article/pii/S2590049822001205 |
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