Realization of cost-effective and high-performance solar-blind ultraviolet photodetectors based on amorphous Ga2O3 prepared at room temperature
The solar-blind photodetectors based on amorphous Ga2O3 (a-Ga2O3) are attractive in recent years due to their simple fabrication process and good compatibility with different substrates. Herein, the cost-effective and high-performance thin-film transistor (TFT) type solar-blind photodetector based o...
Main Authors: | Yifei Wang, Yixin Xue, Jie Su, Zhenhua Lin, Jincheng Zhang, Jingjing Chang, Yue Hao |
---|---|
Format: | Article |
Language: | English |
Published: |
Elsevier
2022-12-01
|
Series: | Materials Today Advances |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2590049822001205 |
Similar Items
-
High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition
by: Yu Xu, et al.
Published: (2021-11-01) -
Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponse
by: Yifei Wang, et al.
Published: (2024-02-01) -
Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
by: Haiping Wang, et al.
Published: (2022-12-01) -
Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film
by: Mao Ye, et al.
Published: (2022-07-01) -
Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation
by: Youngbin Yoon, et al.
Published: (2022-05-01)