CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION
Analytical formulae for calculating simultaneous diffusion of two impurities in silicon are presented. The formulae are based on analytical solutions of diffusion equations that have been obtained for the first time by the author while using some special mathematical functions. In contrast to usual...
Main Author: | |
---|---|
Format: | Article |
Language: | Russian |
Published: |
Belarusian National Technical University
2005-02-01
|
Series: | Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика |
Online Access: | https://energy.bntu.by/jour/article/view/916 |
_version_ | 1826556665835552768 |
---|---|
author | V. A. Bondarev |
author_facet | V. A. Bondarev |
author_sort | V. A. Bondarev |
collection | DOAJ |
description | Analytical formulae for calculating simultaneous diffusion of two impurities in silicon are presented. The formulae are based on analytical solutions of diffusion equations that have been obtained for the first time by the author while using some special mathematical functions. In contrast to usual formal mathematical approaches, new functions are determined in the process of investigation of real physical models. Algorithms involve some important relations from thermodynamics of irreversible processes and also variational thermodynamic functionals that were previously obtained by the author for transfer processes. Calculations considerably reduce the time required for development of new integrated circuits. |
first_indexed | 2024-04-10T02:56:01Z |
format | Article |
id | doaj.art-a2e8bcf733fc4a45b23c0cd6865f127a |
institution | Directory Open Access Journal |
issn | 1029-7448 2414-0341 |
language | Russian |
last_indexed | 2025-03-14T08:16:19Z |
publishDate | 2005-02-01 |
publisher | Belarusian National Technical University |
record_format | Article |
series | Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика |
spelling | doaj.art-a2e8bcf733fc4a45b23c0cd6865f127a2025-03-02T13:14:16ZrusBelarusian National Technical UniversityИзвестия высших учебных заведений и энергетических объединенний СНГ: Энергетика1029-74482414-03412005-02-01018488893CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTIONV. A. Bondarev0Belarusian National Technical UniversityAnalytical formulae for calculating simultaneous diffusion of two impurities in silicon are presented. The formulae are based on analytical solutions of diffusion equations that have been obtained for the first time by the author while using some special mathematical functions. In contrast to usual formal mathematical approaches, new functions are determined in the process of investigation of real physical models. Algorithms involve some important relations from thermodynamics of irreversible processes and also variational thermodynamic functionals that were previously obtained by the author for transfer processes. Calculations considerably reduce the time required for development of new integrated circuits.https://energy.bntu.by/jour/article/view/916 |
spellingShingle | V. A. Bondarev CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика |
title | CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION |
title_full | CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION |
title_fullStr | CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION |
title_full_unstemmed | CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION |
title_short | CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION |
title_sort | calculations of double impurity diffusion in integrated circuit production |
url | https://energy.bntu.by/jour/article/view/916 |
work_keys_str_mv | AT vabondarev calculationsofdoubleimpuritydiffusioninintegratedcircuitproduction |