CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION

Analytical formulae for calculating simultaneous diffusion of two impurities in silicon are presented. The formulae are based on analytical solutions of diffusion equations that have been obtained for the first time by the author while using some special mathematical functions. In contrast to usual...

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Main Author: V. A. Bondarev
Format: Article
Language:Russian
Published: Belarusian National Technical University 2005-02-01
Series:Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика
Online Access:https://energy.bntu.by/jour/article/view/916
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author V. A. Bondarev
author_facet V. A. Bondarev
author_sort V. A. Bondarev
collection DOAJ
description Analytical formulae for calculating simultaneous diffusion of two impurities in silicon are presented. The formulae are based on analytical solutions of diffusion equations that have been obtained for the first time by the author while using some special mathematical functions. In contrast to usual formal mathematical approaches, new functions are determined in the process of investigation of real physical models. Algorithms involve some important relations from thermodynamics of irreversible processes and also variational thermodynamic functionals that were previously obtained by the author for transfer processes. Calculations considerably reduce the time required for development of new integrated circuits.
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spelling doaj.art-a2e8bcf733fc4a45b23c0cd6865f127a2025-03-02T13:14:16ZrusBelarusian National Technical UniversityИзвестия высших учебных заведений и энергетических объединенний СНГ: Энергетика1029-74482414-03412005-02-01018488893CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTIONV. A. Bondarev0Belarusian National Technical UniversityAnalytical formulae for calculating simultaneous diffusion of two impurities in silicon are presented. The formulae are based on analytical solutions of diffusion equations that have been obtained for the first time by the author while using some special mathematical functions. In contrast to usual formal mathematical approaches, new functions are determined in the process of investigation of real physical models. Algorithms involve some important relations from thermodynamics of irreversible processes and also variational thermodynamic functionals that were previously obtained by the author for transfer processes. Calculations considerably reduce the time required for development of new integrated circuits.https://energy.bntu.by/jour/article/view/916
spellingShingle V. A. Bondarev
CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION
Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика
title CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION
title_full CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION
title_fullStr CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION
title_full_unstemmed CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION
title_short CALCULATIONS OF DOUBLE IMPURITY DIFFUSION IN INTEGRATED CIRCUIT PRODUCTION
title_sort calculations of double impurity diffusion in integrated circuit production
url https://energy.bntu.by/jour/article/view/916
work_keys_str_mv AT vabondarev calculationsofdoubleimpuritydiffusioninintegratedcircuitproduction