Comparative Analysis of Design Parameters for Modern Radio Frequency Complementary Metal Oxide Semiconductor Ultra-Low Power Amplifier Architecture Trends
This research presents a comparative analysis of design parameters in modern power amplifier (PA) architecture trends in various CMOS nano-meter technologies. The design parameters include the signal gain, linearity, output power, and output power back-off. The resultant parameters are compared usin...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-09-01
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| Series: | Engineering Proceedings |
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| Online Access: | https://www.mdpi.com/2673-4591/46/1/12 |
| Summary: | This research presents a comparative analysis of design parameters in modern power amplifier (PA) architecture trends in various CMOS nano-meter technologies. The design parameters include the signal gain, linearity, output power, and output power back-off. The resultant parameters are compared using a table, and various parameters of various designs are visually shown for comparison. These comparative findings will provide any designer with practical information to choose the best CMOS PA design for a specific application. The most important RF CMOS PA integrated implementations are addressed in the conclusion section. |
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| ISSN: | 2673-4591 |