Preparation and Optimization of Mesoporous SnO<sub>2</sub> Quantum Dot Thin Film Gas Sensors for H<sub>2</sub>S Detection Using XGBoost Parameter Importance Analysis
Tin oxide (SnO<sub>2</sub>) is a traditional gas-sensitive semiconductor with excellent response to various gases. However, its sensor performances are attenuated by the utility factor during gas diffusion in the sensing body. Therefore, the rational design of microstructure of devices i...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-10-01
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| Series: | Chemosensors |
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| Online Access: | https://www.mdpi.com/2227-9040/11/10/525 |
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| author | Jianqiao Liu Yujia Wang Yue Sun Kuanguang Zhang Yang Ding Ce Fu Junsheng Wang |
| author_facet | Jianqiao Liu Yujia Wang Yue Sun Kuanguang Zhang Yang Ding Ce Fu Junsheng Wang |
| author_sort | Jianqiao Liu |
| collection | DOAJ |
| description | Tin oxide (SnO<sub>2</sub>) is a traditional gas-sensitive semiconductor with excellent response to various gases. However, its sensor performances are attenuated by the utility factor during gas diffusion in the sensing body. Therefore, the rational design of microstructure of devices is attractive and necessary because it may provide a sensible and controllable microstructure, which facilitates gas diffusion and inhibits the utility factor. Herein, the mesoporous tin oxide (MPTD) quantum dot thin film for H<sub>2</sub>S gas sensors is prepared by a facile route, which creates a mesoporous microstructure for thin films by the thermal decomposition of NH<sub>4</sub>Cl. The pore size of the thin films is controlled to be 19.36–40.13 nm. The mesoporous microstructure exhibits enhanced gas-sensing properties amounting to a 30-fold increase in response and 1/3 reduction in recovery time in H<sub>2</sub>S detection at room temperature (25 °C), with a limit of detection of 0.4 ppm. To determine the importance of sensor parameters such as pore size, film thickness, and grain size, an eXtreme Gradient Boosting (XGBoost) algorithm model was developed to examine the feature importance of each parameter on the gas-sensing performance of the MPTD sensors. The visual illustration of parameter importance is revealed to facilitate the optimization of technical preparation parameters as well as the rational design of semiconductor gas sensors. |
| first_indexed | 2024-03-10T21:20:53Z |
| format | Article |
| id | doaj.art-a31672ad51234aea8bf6976be9ac15d5 |
| institution | Directory Open Access Journal |
| issn | 2227-9040 |
| language | English |
| last_indexed | 2024-03-10T21:20:53Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Chemosensors |
| spelling | doaj.art-a31672ad51234aea8bf6976be9ac15d52023-11-19T16:03:48ZengMDPI AGChemosensors2227-90402023-10-01111052510.3390/chemosensors11100525Preparation and Optimization of Mesoporous SnO<sub>2</sub> Quantum Dot Thin Film Gas Sensors for H<sub>2</sub>S Detection Using XGBoost Parameter Importance AnalysisJianqiao Liu0Yujia Wang1Yue Sun2Kuanguang Zhang3Yang Ding4Ce Fu5Junsheng Wang6College of Information Science and Technology, Dalian Maritime University, Dalian 116026, ChinaCollege of Information Science and Technology, Dalian Maritime University, Dalian 116026, ChinaCollege of Information Science and Technology, Dalian Maritime University, Dalian 116026, ChinaCollege of Information Science and Technology, Dalian Maritime University, Dalian 116026, ChinaCollege of Information Science and Technology, Dalian Maritime University, Dalian 116026, ChinaCollege of Information Science and Technology, Dalian Maritime University, Dalian 116026, ChinaCollege of Information Science and Technology, Dalian Maritime University, Dalian 116026, ChinaTin oxide (SnO<sub>2</sub>) is a traditional gas-sensitive semiconductor with excellent response to various gases. However, its sensor performances are attenuated by the utility factor during gas diffusion in the sensing body. Therefore, the rational design of microstructure of devices is attractive and necessary because it may provide a sensible and controllable microstructure, which facilitates gas diffusion and inhibits the utility factor. Herein, the mesoporous tin oxide (MPTD) quantum dot thin film for H<sub>2</sub>S gas sensors is prepared by a facile route, which creates a mesoporous microstructure for thin films by the thermal decomposition of NH<sub>4</sub>Cl. The pore size of the thin films is controlled to be 19.36–40.13 nm. The mesoporous microstructure exhibits enhanced gas-sensing properties amounting to a 30-fold increase in response and 1/3 reduction in recovery time in H<sub>2</sub>S detection at room temperature (25 °C), with a limit of detection of 0.4 ppm. To determine the importance of sensor parameters such as pore size, film thickness, and grain size, an eXtreme Gradient Boosting (XGBoost) algorithm model was developed to examine the feature importance of each parameter on the gas-sensing performance of the MPTD sensors. The visual illustration of parameter importance is revealed to facilitate the optimization of technical preparation parameters as well as the rational design of semiconductor gas sensors.https://www.mdpi.com/2227-9040/11/10/525mesoporous microstructureSnO<sub>2</sub> quantum dot thin filmNH<sub>4</sub>ClXGBoost algorithmgas sensor |
| spellingShingle | Jianqiao Liu Yujia Wang Yue Sun Kuanguang Zhang Yang Ding Ce Fu Junsheng Wang Preparation and Optimization of Mesoporous SnO<sub>2</sub> Quantum Dot Thin Film Gas Sensors for H<sub>2</sub>S Detection Using XGBoost Parameter Importance Analysis Chemosensors mesoporous microstructure SnO<sub>2</sub> quantum dot thin film NH<sub>4</sub>Cl XGBoost algorithm gas sensor |
| title | Preparation and Optimization of Mesoporous SnO<sub>2</sub> Quantum Dot Thin Film Gas Sensors for H<sub>2</sub>S Detection Using XGBoost Parameter Importance Analysis |
| title_full | Preparation and Optimization of Mesoporous SnO<sub>2</sub> Quantum Dot Thin Film Gas Sensors for H<sub>2</sub>S Detection Using XGBoost Parameter Importance Analysis |
| title_fullStr | Preparation and Optimization of Mesoporous SnO<sub>2</sub> Quantum Dot Thin Film Gas Sensors for H<sub>2</sub>S Detection Using XGBoost Parameter Importance Analysis |
| title_full_unstemmed | Preparation and Optimization of Mesoporous SnO<sub>2</sub> Quantum Dot Thin Film Gas Sensors for H<sub>2</sub>S Detection Using XGBoost Parameter Importance Analysis |
| title_short | Preparation and Optimization of Mesoporous SnO<sub>2</sub> Quantum Dot Thin Film Gas Sensors for H<sub>2</sub>S Detection Using XGBoost Parameter Importance Analysis |
| title_sort | preparation and optimization of mesoporous sno sub 2 sub quantum dot thin film gas sensors for h sub 2 sub s detection using xgboost parameter importance analysis |
| topic | mesoporous microstructure SnO<sub>2</sub> quantum dot thin film NH<sub>4</sub>Cl XGBoost algorithm gas sensor |
| url | https://www.mdpi.com/2227-9040/11/10/525 |
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