Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods
In this work, lutetium-doped silicon samples were studied using the Raman scattering method. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. There is some violation in the spectra of Raman scattering of light samples of silicon dope...
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| Format: | Article |
| Language: | English |
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V.N. Karazin Kharkiv National University Publishing
2023-12-01
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| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/22143 |
| _version_ | 1797428035085926400 |
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| author | Khodjakbar S. Daliev Sharifa B. Utamuradova Zavkiddin E. Bahronkulov Alisher Kh. Khaitbaev Jonibek J. Hamdamov |
| author_facet | Khodjakbar S. Daliev Sharifa B. Utamuradova Zavkiddin E. Bahronkulov Alisher Kh. Khaitbaev Jonibek J. Hamdamov |
| author_sort | Khodjakbar S. Daliev |
| collection | DOAJ |
| description |
In this work, lutetium-doped silicon samples were studied using the Raman scattering method. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. There is some violation in the spectra of Raman scattering of light samples of silicon doped with lutetium in comparison with the original sample. It was found that the intensity of Raman scattering of doped samples is 2-3 times higher than the scattering from silicon. The comparison is carried out for the intensities associated with the intensities of the single-phonon line of the silicon substrate. This effect of the Raman spectra in the range 930 cm‑1 – 1030 cm–1 appearing in this range is similar to the data reduction for multiphonon propagation on silicon. For the obtained images (n-Si<Lu> and p-Si<Lu>), the bands in the atomic range of combinatorial scattering have a mixed broad and oval background in the range from 623 cm-1 to 1400 cm-1. This background can change the shape of the observed bands.
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| first_indexed | 2024-03-09T08:53:24Z |
| format | Article |
| id | doaj.art-a3224a406734426781b7415631497d5b |
| institution | Directory Open Access Journal |
| issn | 2312-4334 2312-4539 |
| language | English |
| last_indexed | 2024-03-09T08:53:24Z |
| publishDate | 2023-12-01 |
| publisher | V.N. Karazin Kharkiv National University Publishing |
| record_format | Article |
| series | East European Journal of Physics |
| spelling | doaj.art-a3224a406734426781b7415631497d5b2023-12-02T13:52:24ZengV.N. Karazin Kharkiv National University PublishingEast European Journal of Physics2312-43342312-45392023-12-01410.26565/2312-4334-2023-4-23Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer MethodsKhodjakbar S. Daliev0Sharifa B. Utamuradova1Zavkiddin E. Bahronkulov2Alisher Kh. Khaitbaev3Jonibek J. Hamdamov4Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, UzbekistanInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanNational University of Uzbekistan, Tashkent, UzbekistanInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan In this work, lutetium-doped silicon samples were studied using the Raman scattering method. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. There is some violation in the spectra of Raman scattering of light samples of silicon doped with lutetium in comparison with the original sample. It was found that the intensity of Raman scattering of doped samples is 2-3 times higher than the scattering from silicon. The comparison is carried out for the intensities associated with the intensities of the single-phonon line of the silicon substrate. This effect of the Raman spectra in the range 930 cm‑1 – 1030 cm–1 appearing in this range is similar to the data reduction for multiphonon propagation on silicon. For the obtained images (n-Si<Lu> and p-Si<Lu>), the bands in the atomic range of combinatorial scattering have a mixed broad and oval background in the range from 623 cm-1 to 1400 cm-1. This background can change the shape of the observed bands. https://periodicals.karazin.ua/eejp/article/view/22143SiliconLutetiumRaman spectroscopyDiffusionDopingTemperature |
| spellingShingle | Khodjakbar S. Daliev Sharifa B. Utamuradova Zavkiddin E. Bahronkulov Alisher Kh. Khaitbaev Jonibek J. Hamdamov Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods East European Journal of Physics Silicon Lutetium Raman spectroscopy Diffusion Doping Temperature |
| title | Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods |
| title_full | Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods |
| title_fullStr | Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods |
| title_full_unstemmed | Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods |
| title_short | Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods |
| title_sort | structure determination and defect analysis n si lu p si lu raman spectrometer methods |
| topic | Silicon Lutetium Raman spectroscopy Diffusion Doping Temperature |
| url | https://periodicals.karazin.ua/eejp/article/view/22143 |
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