Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods

Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods

In this work, lutetium-doped silicon samples were studied using the Raman scattering method. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. There is some violation in the spectra of Raman scattering of light samples of silicon dope...

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Bibliographic Details
Main Authors: Khodjakbar S. Daliev, Sharifa B. Utamuradova, Zavkiddin E. Bahronkulov, Alisher Kh. Khaitbaev, Jonibek J. Hamdamov
Format: Article
Language:English
Published: V.N. Karazin Kharkiv National University Publishing 2023-12-01
Series:East European Journal of Physics
Subjects:
Silicon
Lutetium
Raman spectroscopy
Diffusion
Doping
Temperature
Online Access:https://periodicals.karazin.ua/eejp/article/view/22143

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