Enhanced spin-orbit torques and perpendicular magnetic anisotropy in CoFeB/MgO structures with Ta/W bilayer
Spin-orbit torques (SOTs) and the perpendicular magnetic anisotropy (PMA) in Ta/W/CoFeB/MgO structures have been investigated by varying the thickness of the W layer. Addition of the W layer gives rise to enhancement of the annealing stability and perpendicular anisotropy field. After annealing at h...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2018-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5023192 |
| _version_ | 1818940346866860032 |
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| author | S. K. Li X. T. Zhao W. Liu T. T. Wang X. G. Zhao Z. D. Zhang |
| author_facet | S. K. Li X. T. Zhao W. Liu T. T. Wang X. G. Zhao Z. D. Zhang |
| author_sort | S. K. Li |
| collection | DOAJ |
| description | Spin-orbit torques (SOTs) and the perpendicular magnetic anisotropy (PMA) in Ta/W/CoFeB/MgO structures have been investigated by varying the thickness of the W layer. Addition of the W layer gives rise to enhancement of the annealing stability and perpendicular anisotropy field. After annealing at high temperature, a high-resistivity is obtained for samples with W layer (up to 2 nm thickness), which indicates the existence of β-W phase. A giant spin Hall angle of 0.50 is found in Ta/W/CoFeB/MgO structures with a 2 nm W layer by using the harmonic Hall voltage measurement. The lowest switching current density of 6 MA/cm2 is achieved in the sample with 1 nm W layer, indicating that a strong interfacial spin Hall effect may exist in the CoFeB/W interface. The study may provide a way to obtain simultaneously a large PMA as well as a high efficiency of SOTs. |
| first_indexed | 2024-12-20T06:38:11Z |
| format | Article |
| id | doaj.art-a33330337cda46c090bf7caf3b587d95 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-20T06:38:11Z |
| publishDate | 2018-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-a33330337cda46c090bf7caf3b587d952022-12-21T19:49:56ZengAIP Publishing LLCAIP Advances2158-32262018-06-0186065007065007-710.1063/1.5023192021806ADVEnhanced spin-orbit torques and perpendicular magnetic anisotropy in CoFeB/MgO structures with Ta/W bilayerS. K. Li0X. T. Zhao1W. Liu2T. T. Wang3X. G. Zhao4Z. D. Zhang5Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, ChinaSpin-orbit torques (SOTs) and the perpendicular magnetic anisotropy (PMA) in Ta/W/CoFeB/MgO structures have been investigated by varying the thickness of the W layer. Addition of the W layer gives rise to enhancement of the annealing stability and perpendicular anisotropy field. After annealing at high temperature, a high-resistivity is obtained for samples with W layer (up to 2 nm thickness), which indicates the existence of β-W phase. A giant spin Hall angle of 0.50 is found in Ta/W/CoFeB/MgO structures with a 2 nm W layer by using the harmonic Hall voltage measurement. The lowest switching current density of 6 MA/cm2 is achieved in the sample with 1 nm W layer, indicating that a strong interfacial spin Hall effect may exist in the CoFeB/W interface. The study may provide a way to obtain simultaneously a large PMA as well as a high efficiency of SOTs.http://dx.doi.org/10.1063/1.5023192 |
| spellingShingle | S. K. Li X. T. Zhao W. Liu T. T. Wang X. G. Zhao Z. D. Zhang Enhanced spin-orbit torques and perpendicular magnetic anisotropy in CoFeB/MgO structures with Ta/W bilayer AIP Advances |
| title | Enhanced spin-orbit torques and perpendicular magnetic anisotropy in CoFeB/MgO structures with Ta/W bilayer |
| title_full | Enhanced spin-orbit torques and perpendicular magnetic anisotropy in CoFeB/MgO structures with Ta/W bilayer |
| title_fullStr | Enhanced spin-orbit torques and perpendicular magnetic anisotropy in CoFeB/MgO structures with Ta/W bilayer |
| title_full_unstemmed | Enhanced spin-orbit torques and perpendicular magnetic anisotropy in CoFeB/MgO structures with Ta/W bilayer |
| title_short | Enhanced spin-orbit torques and perpendicular magnetic anisotropy in CoFeB/MgO structures with Ta/W bilayer |
| title_sort | enhanced spin orbit torques and perpendicular magnetic anisotropy in cofeb mgo structures with ta w bilayer |
| url | http://dx.doi.org/10.1063/1.5023192 |
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