Interface Optimization and Transport Modulation of Sm<sub>2</sub>O<sub>3</sub>/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Interface Optimization and Transport Modulation of Sm<sub>2</sub>O<sub>3</sub>/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

In this paper, the effect of atomic layer deposition-derived laminated interlayer on the interface chemistry and transport characteristics of sputtering-deposited Sm<sub>2</sub>O<sub>3</sub>/InP gate stacks have been investigated systematically. Based on X-ray photoelectron s...

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Bibliographic Details
Main Authors:	Jinyu Lu, Gang He, Jin Yan, Zhenxiang Dai, Ganhong Zheng, Shanshan Jiang, Lesheng Qiao, Qian Gao, Zebo Fang
Format:	Article
Language:	English
Published:	MDPI AG 2021-12-01
Series:	Nanomaterials
Subjects:	MOS capacitors Sm<sub>2</sub>O<sub>3</sub> high-k gate dielectric atomic layer deposition conduction mechanisms interface state density
Online Access:	https://www.mdpi.com/2079-4991/11/12/3443

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