Room-temperature spin injection from a ferromagnetic semiconductor

Abstract Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V b...

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Main Authors: Shobhit Goel, Nguyen Huynh Duy Khang, Yuki Osada, Le Duc Anh, Pham Nam Hai, Masaaki Tanaka
Format: Article
Language:English
Published: Nature Portfolio 2023-02-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-023-29169-9
_version_ 1811165946194165760
author Shobhit Goel
Nguyen Huynh Duy Khang
Yuki Osada
Le Duc Anh
Pham Nam Hai
Masaaki Tanaka
author_facet Shobhit Goel
Nguyen Huynh Duy Khang
Yuki Osada
Le Duc Anh
Pham Nam Hai
Masaaki Tanaka
author_sort Shobhit Goel
collection DOAJ
description Abstract Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (T C) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS.
first_indexed 2024-04-10T15:44:25Z
format Article
id doaj.art-a354ba7caa8d4b14991c9e12764b10ff
institution Directory Open Access Journal
issn 2045-2322
language English
last_indexed 2024-04-10T15:44:25Z
publishDate 2023-02-01
publisher Nature Portfolio
record_format Article
series Scientific Reports
spelling doaj.art-a354ba7caa8d4b14991c9e12764b10ff2023-02-12T12:11:16ZengNature PortfolioScientific Reports2045-23222023-02-011311910.1038/s41598-023-29169-9Room-temperature spin injection from a ferromagnetic semiconductorShobhit Goel0Nguyen Huynh Duy Khang1Yuki Osada2Le Duc Anh3Pham Nam Hai4Masaaki Tanaka5Department of Electrical Engineering and Information Systems, The University of TokyoDepartment of Electrical and Electronic Engineering, Tokyo Institute of TechnologyDepartment of Electrical and Electronic Engineering, Tokyo Institute of TechnologyDepartment of Electrical Engineering and Information Systems, The University of TokyoCREST, Japan Science and Technology AgencyDepartment of Electrical Engineering and Information Systems, The University of TokyoAbstract Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (T C) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS.https://doi.org/10.1038/s41598-023-29169-9
spellingShingle Shobhit Goel
Nguyen Huynh Duy Khang
Yuki Osada
Le Duc Anh
Pham Nam Hai
Masaaki Tanaka
Room-temperature spin injection from a ferromagnetic semiconductor
Scientific Reports
title Room-temperature spin injection from a ferromagnetic semiconductor
title_full Room-temperature spin injection from a ferromagnetic semiconductor
title_fullStr Room-temperature spin injection from a ferromagnetic semiconductor
title_full_unstemmed Room-temperature spin injection from a ferromagnetic semiconductor
title_short Room-temperature spin injection from a ferromagnetic semiconductor
title_sort room temperature spin injection from a ferromagnetic semiconductor
url https://doi.org/10.1038/s41598-023-29169-9
work_keys_str_mv AT shobhitgoel roomtemperaturespininjectionfromaferromagneticsemiconductor
AT nguyenhuynhduykhang roomtemperaturespininjectionfromaferromagneticsemiconductor
AT yukiosada roomtemperaturespininjectionfromaferromagneticsemiconductor
AT leducanh roomtemperaturespininjectionfromaferromagneticsemiconductor
AT phamnamhai roomtemperaturespininjectionfromaferromagneticsemiconductor
AT masaakitanaka roomtemperaturespininjectionfromaferromagneticsemiconductor