Improved Performance of SRAM-Based True Random Number Generator by Leveraging Irradiation Exposure

Improved Performance of SRAM-Based True Random Number Generator by Leveraging Irradiation Exposure

Encryption is an important step for secure data transmission, and a true random number generator (TRNG) is a key building block in many encryption algorithms. Static random-access memory (SRAM) chips can be easily available sources of true random numbers, benefiting from noisy SRAM cells whose start...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Xu Zhang, Chunsheng Jiang, Gang Dai, Le Zhong, Wen Fang, Ke Gu, Guoping Xiao, Shangqing Ren, Xin Liu, Sanyong Zou
Aineistotyyppi: Artikkeli
Kieli:English
Julkaistu: MDPI AG 2020-10-01
Sarja:Sensors
Aiheet:
SRAM-based TRNG
total ionizing irradiation (TID)
min-entropy
data remanence effect
throughput
Linkit:https://www.mdpi.com/1424-8220/20/21/6132

Internet

https://www.mdpi.com/1424-8220/20/21/6132

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