Possible experimental realization of a basic Z2 topological semimetal in GaGeTe
We report experimental and theoretical evidence that GaGeTe is a basic Z2 topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the classic 3D topological insulator Bi2S...
| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5124563 |
| _version_ | 1818574931549487104 |
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| author | Erik Haubold Alexander Fedorov Florian Pielnhofer Igor P. Rusinov Tatiana V. Menshchikova Viola Duppel Daniel Friedrich Richard Weihrich Arno Pfitzner Alexander Zeugner Anna Isaeva Setti Thirupathaiah Yevhen Kushnirenko Emile Rienks Timur Kim Evgueni V. Chulkov Bernd Büchner Sergey Borisenko |
| author_facet | Erik Haubold Alexander Fedorov Florian Pielnhofer Igor P. Rusinov Tatiana V. Menshchikova Viola Duppel Daniel Friedrich Richard Weihrich Arno Pfitzner Alexander Zeugner Anna Isaeva Setti Thirupathaiah Yevhen Kushnirenko Emile Rienks Timur Kim Evgueni V. Chulkov Bernd Büchner Sergey Borisenko |
| author_sort | Erik Haubold |
| collection | DOAJ |
| description | We report experimental and theoretical evidence that GaGeTe is a basic Z2 topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the classic 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolved photoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiar band inversion at the T-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electron and holelike carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue that peculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost the material’s application potential. |
| first_indexed | 2024-12-15T00:33:07Z |
| format | Article |
| id | doaj.art-a3746c7999754c6c8a470f1f3a0d3ed3 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-15T00:33:07Z |
| publishDate | 2019-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-a3746c7999754c6c8a470f1f3a0d3ed32022-12-21T22:41:56ZengAIP Publishing LLCAPL Materials2166-532X2019-12-01712121106121106-710.1063/1.5124563Possible experimental realization of a basic Z2 topological semimetal in GaGeTeErik Haubold0Alexander Fedorov1Florian Pielnhofer2Igor P. Rusinov3Tatiana V. Menshchikova4Viola Duppel5Daniel Friedrich6Richard Weihrich7Arno Pfitzner8Alexander Zeugner9Anna Isaeva10Setti Thirupathaiah11Yevhen Kushnirenko12Emile Rienks13Timur Kim14Evgueni V. Chulkov15Bernd Büchner16Sergey Borisenko17IFW Dresden, Helmholtzstr. 20, 01069 Dresden, GermanyIFW Dresden, Helmholtzstr. 20, 01069 Dresden, GermanyMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyTomsk State University, pr. Lenina 36, 634050 Tomsk, RussiaTomsk State University, pr. Lenina 36, 634050 Tomsk, RussiaMax Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, GermanyInstitut für Anorganische Chemie, Universität Regensburg, 93040 Regensburg, GermanyUniversität Augsburg, Institut für Materials Ressource Management, Universitätsstr. 2, 86135 Augsburg, GermanyInstitut für Anorganische Chemie, Universität Regensburg, 93040 Regensburg, GermanyIFW Dresden, Helmholtzstr. 20, 01069 Dresden, GermanyIFW Dresden, Helmholtzstr. 20, 01069 Dresden, GermanyIFW Dresden, Helmholtzstr. 20, 01069 Dresden, GermanyIFW Dresden, Helmholtzstr. 20, 01069 Dresden, GermanyIFW Dresden, Helmholtzstr. 20, 01069 Dresden, GermanyDiamond Light Source, Harwell Campus, Didcot OX11 0DE, United KingdomTomsk State University, pr. Lenina 36, 634050 Tomsk, RussiaIFW Dresden, Helmholtzstr. 20, 01069 Dresden, GermanyIFW Dresden, Helmholtzstr. 20, 01069 Dresden, GermanyWe report experimental and theoretical evidence that GaGeTe is a basic Z2 topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the classic 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolved photoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiar band inversion at the T-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electron and holelike carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue that peculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost the material’s application potential.http://dx.doi.org/10.1063/1.5124563 |
| spellingShingle | Erik Haubold Alexander Fedorov Florian Pielnhofer Igor P. Rusinov Tatiana V. Menshchikova Viola Duppel Daniel Friedrich Richard Weihrich Arno Pfitzner Alexander Zeugner Anna Isaeva Setti Thirupathaiah Yevhen Kushnirenko Emile Rienks Timur Kim Evgueni V. Chulkov Bernd Büchner Sergey Borisenko Possible experimental realization of a basic Z2 topological semimetal in GaGeTe APL Materials |
| title | Possible experimental realization of a basic Z2 topological semimetal in GaGeTe |
| title_full | Possible experimental realization of a basic Z2 topological semimetal in GaGeTe |
| title_fullStr | Possible experimental realization of a basic Z2 topological semimetal in GaGeTe |
| title_full_unstemmed | Possible experimental realization of a basic Z2 topological semimetal in GaGeTe |
| title_short | Possible experimental realization of a basic Z2 topological semimetal in GaGeTe |
| title_sort | possible experimental realization of a basic z2 topological semimetal in gagete |
| url | http://dx.doi.org/10.1063/1.5124563 |
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