Demonstration of gallium oxide nano-pillar field emitter arrays
We demonstrate field emission characteristics of β-Ga2O3 nano-pillar arrays fabricated using a damage-free etching technique. The technique utilizes Ga flux in an ultra-high vacuum environment (molecular beam epitaxy) to form high aspect ratio Ga2O3 nano-pillars with atomic-scale etching precision....
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0145200 |
| Summary: | We demonstrate field emission characteristics of β-Ga2O3 nano-pillar arrays fabricated using a damage-free etching technique. The technique utilizes Ga flux in an ultra-high vacuum environment (molecular beam epitaxy) to form high aspect ratio Ga2O3 nano-pillars with atomic-scale etching precision. Electrically conductive Ga2O3 nano-pillars with uniform widths of ∼200–300 nm were realized without the use of e-beam lithography. Furthermore, field emission characteristics on the nano-pillars displayed an emission current of 19 nA per tip at an electric field of 385 kV/cm. The field emission characteristics were modeled using the Murphy–Good model, and the measurements were validated with a field emission orthodoxy test. |
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| ISSN: | 2158-3226 |