Demonstration of gallium oxide nano-pillar field emitter arrays
We demonstrate field emission characteristics of β-Ga2O3 nano-pillar arrays fabricated using a damage-free etching technique. The technique utilizes Ga flux in an ultra-high vacuum environment (molecular beam epitaxy) to form high aspect ratio Ga2O3 nano-pillars with atomic-scale etching precision....
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0145200 |
| _version_ | 1797755898499694592 |
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| author | Taeyoung Kim Chandan Joishi Zhanbo Xia Nidhin Kurian Kalarickal Camelia Selcu Tyson Back Jonathan Ludwick Siddharth Rajan |
| author_facet | Taeyoung Kim Chandan Joishi Zhanbo Xia Nidhin Kurian Kalarickal Camelia Selcu Tyson Back Jonathan Ludwick Siddharth Rajan |
| author_sort | Taeyoung Kim |
| collection | DOAJ |
| description | We demonstrate field emission characteristics of β-Ga2O3 nano-pillar arrays fabricated using a damage-free etching technique. The technique utilizes Ga flux in an ultra-high vacuum environment (molecular beam epitaxy) to form high aspect ratio Ga2O3 nano-pillars with atomic-scale etching precision. Electrically conductive Ga2O3 nano-pillars with uniform widths of ∼200–300 nm were realized without the use of e-beam lithography. Furthermore, field emission characteristics on the nano-pillars displayed an emission current of 19 nA per tip at an electric field of 385 kV/cm. The field emission characteristics were modeled using the Murphy–Good model, and the measurements were validated with a field emission orthodoxy test. |
| first_indexed | 2024-03-12T17:53:46Z |
| format | Article |
| id | doaj.art-a3768041ff5e4436a87f52123c6300e2 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-12T17:53:46Z |
| publishDate | 2023-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-a3768041ff5e4436a87f52123c6300e22023-08-02T20:06:09ZengAIP Publishing LLCAIP Advances2158-32262023-07-01137075119075119-710.1063/5.0145200Demonstration of gallium oxide nano-pillar field emitter arraysTaeyoung Kim0Chandan Joishi1Zhanbo Xia2Nidhin Kurian Kalarickal3Camelia Selcu4Tyson Back5Jonathan Ludwick6Siddharth Rajan7Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USANanoSystems Laboratory, Department of Physics, The Ohio State University, Columbus, Ohio 43210, USAMaterials and Manufacturing Directorate, Air Force Research Laboratory, 2179 12th Street, B652/R122WPAFB, Ohio 45433-7718, USAUES, 2179 12th St., Wright-Patterson Air Force Base, Dayton, Ohio 45433, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USAWe demonstrate field emission characteristics of β-Ga2O3 nano-pillar arrays fabricated using a damage-free etching technique. The technique utilizes Ga flux in an ultra-high vacuum environment (molecular beam epitaxy) to form high aspect ratio Ga2O3 nano-pillars with atomic-scale etching precision. Electrically conductive Ga2O3 nano-pillars with uniform widths of ∼200–300 nm were realized without the use of e-beam lithography. Furthermore, field emission characteristics on the nano-pillars displayed an emission current of 19 nA per tip at an electric field of 385 kV/cm. The field emission characteristics were modeled using the Murphy–Good model, and the measurements were validated with a field emission orthodoxy test.http://dx.doi.org/10.1063/5.0145200 |
| spellingShingle | Taeyoung Kim Chandan Joishi Zhanbo Xia Nidhin Kurian Kalarickal Camelia Selcu Tyson Back Jonathan Ludwick Siddharth Rajan Demonstration of gallium oxide nano-pillar field emitter arrays AIP Advances |
| title | Demonstration of gallium oxide nano-pillar field emitter arrays |
| title_full | Demonstration of gallium oxide nano-pillar field emitter arrays |
| title_fullStr | Demonstration of gallium oxide nano-pillar field emitter arrays |
| title_full_unstemmed | Demonstration of gallium oxide nano-pillar field emitter arrays |
| title_short | Demonstration of gallium oxide nano-pillar field emitter arrays |
| title_sort | demonstration of gallium oxide nano pillar field emitter arrays |
| url | http://dx.doi.org/10.1063/5.0145200 |
| work_keys_str_mv | AT taeyoungkim demonstrationofgalliumoxidenanopillarfieldemitterarrays AT chandanjoishi demonstrationofgalliumoxidenanopillarfieldemitterarrays AT zhanboxia demonstrationofgalliumoxidenanopillarfieldemitterarrays AT nidhinkuriankalarickal demonstrationofgalliumoxidenanopillarfieldemitterarrays AT cameliaselcu demonstrationofgalliumoxidenanopillarfieldemitterarrays AT tysonback demonstrationofgalliumoxidenanopillarfieldemitterarrays AT jonathanludwick demonstrationofgalliumoxidenanopillarfieldemitterarrays AT siddharthrajan demonstrationofgalliumoxidenanopillarfieldemitterarrays |