28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K
This paper presents detailed RF characterization of 28-nm FDSOI nMOSFETs at cryogenic temperatures down to 77 K. Two main RF figures of merit (FoM), i.e., current gain cutoff frequency (f<sub>T</sub>) and maximum oscillation frequency (f<sub>max</sub>), as well as elements of...
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8672466/ |
| _version_ | 1818619639600513024 |
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| author | Babak Kazemi Esfeh Valeriya Kilchytska N. Planes M. Haond Denis Flandre Jean-Pierre Raskin |
| author_facet | Babak Kazemi Esfeh Valeriya Kilchytska N. Planes M. Haond Denis Flandre Jean-Pierre Raskin |
| author_sort | Babak Kazemi Esfeh |
| collection | DOAJ |
| description | This paper presents detailed RF characterization of 28-nm FDSOI nMOSFETs at cryogenic temperatures down to 77 K. Two main RF figures of merit (FoM), i.e., current gain cutoff frequency (f<sub>T</sub>) and maximum oscillation frequency (f<sub>max</sub>), as well as elements of small-signal equivalent circuit are extracted from the measured S-parameters. Increases of f<sub>T</sub> and f<sub>max</sub> by about 85 GHz and about 30 GHz, respectively, are demonstrated at 77 K. The observed behavior of RF FoMs versus temperature is discussed in terms of small-signal equivalent circuit elements, both intrinsic and extrinsic (parasitics). This paper suggests 28-nm FDSOI as a good candidate for future cryogenic applications. |
| first_indexed | 2024-12-16T17:40:41Z |
| format | Article |
| id | doaj.art-a3798bc68dbd4473a5fcf2c48760a450 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-16T17:40:41Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-a3798bc68dbd4473a5fcf2c48760a4502022-12-21T22:22:37ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-01781081610.1109/JEDS.2019.2906724867246628-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 KBabak Kazemi Esfeh0https://orcid.org/0000-0002-3104-890XValeriya Kilchytska1N. Planes2M. Haond3Denis Flandre4https://orcid.org/0000-0001-5298-5196Jean-Pierre Raskin5https://orcid.org/0000-0001-9715-9699ICTEAM, Université catholique de Louvain, Louvain-la-Neuve, BelgiumICTEAM, Université catholique de Louvain, Louvain-la-Neuve, BelgiumST-Microelectronics, Crolles, FranceST-Microelectronics, Crolles, FranceICTEAM, Université catholique de Louvain, Louvain-la-Neuve, BelgiumICTEAM, Université catholique de Louvain, Louvain-la-Neuve, BelgiumThis paper presents detailed RF characterization of 28-nm FDSOI nMOSFETs at cryogenic temperatures down to 77 K. Two main RF figures of merit (FoM), i.e., current gain cutoff frequency (f<sub>T</sub>) and maximum oscillation frequency (f<sub>max</sub>), as well as elements of small-signal equivalent circuit are extracted from the measured S-parameters. Increases of f<sub>T</sub> and f<sub>max</sub> by about 85 GHz and about 30 GHz, respectively, are demonstrated at 77 K. The observed behavior of RF FoMs versus temperature is discussed in terms of small-signal equivalent circuit elements, both intrinsic and extrinsic (parasitics). This paper suggests 28-nm FDSOI as a good candidate for future cryogenic applications.https://ieeexplore.ieee.org/document/8672466/FDSOIUTBB MOSFETsRF figures of merit (FoM)cryogenic temperatureparasitic elements |
| spellingShingle | Babak Kazemi Esfeh Valeriya Kilchytska N. Planes M. Haond Denis Flandre Jean-Pierre Raskin 28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K IEEE Journal of the Electron Devices Society FDSOI UTBB MOSFETs RF figures of merit (FoM) cryogenic temperature parasitic elements |
| title | 28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K |
| title_full | 28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K |
| title_fullStr | 28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K |
| title_full_unstemmed | 28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K |
| title_short | 28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K |
| title_sort | 28 nm fdsoi nmosfet rf figures of merits and parasitic elements extraction at cryogenic temperature down to 77 k |
| topic | FDSOI UTBB MOSFETs RF figures of merit (FoM) cryogenic temperature parasitic elements |
| url | https://ieeexplore.ieee.org/document/8672466/ |
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