Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2016-01-01
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| Series: | Science and Technology of Advanced Materials |
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| Online Access: | http://dx.doi.org/10.1080/14686996.2016.1178565 |
| _version_ | 1818656857834651648 |
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| author | Felix Schubert Steffen Wirth Friederike Zimmermann Johannes Heitmann Thomas Mikolajick Stefan Schmult |
| author_facet | Felix Schubert Steffen Wirth Friederike Zimmermann Johannes Heitmann Thomas Mikolajick Stefan Schmult |
| author_sort | Felix Schubert |
| collection | DOAJ |
| description | Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate that under optimized growth stoichiometry the growth temperature is the key parameter to control its incorporation and that an increase by 55 °C leads to an oxygen reduction by one order of magnitude. Quantitatively this reduction and the resulting optical and electrical properties are analyzed by secondary ion mass spectroscopy, photoluminescence, capacitance versus voltage measurements, low temperature magneto-transport and parasitic current paths in lateral transistor test structures based on two-dimensional electron gases. At a growth temperature of 665 °C the residual charge carrier concentration is decreased to below 1015 cm−3, resulting in insulating behavior and thus making the material suitable for beyond state-of-the-art device applications. |
| first_indexed | 2024-12-17T03:32:15Z |
| format | Article |
| id | doaj.art-a3838733aa08415186179df595cb5d57 |
| institution | Directory Open Access Journal |
| issn | 1468-6996 1878-5514 |
| language | English |
| last_indexed | 2024-12-17T03:32:15Z |
| publishDate | 2016-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials |
| spelling | doaj.art-a3838733aa08415186179df595cb5d572022-12-21T22:05:14ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142016-01-0117123924310.1080/14686996.2016.11785651178565Growth condition dependence of unintentional oxygen incorporation in epitaxial GaNFelix Schubert0Steffen Wirth1Friederike Zimmermann2Johannes Heitmann3Thomas Mikolajick4Stefan Schmult5Namlab gGmbHMax-Planck-Institute for Chemical Physics of SolidsTU Bergakademie Freiberg, Institute of Applied PhysicsTU Bergakademie Freiberg, Institute of Applied PhysicsNamlab gGmbHTU Dresden, Institute of Semiconductors and MicrosystemsGrowth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate that under optimized growth stoichiometry the growth temperature is the key parameter to control its incorporation and that an increase by 55 °C leads to an oxygen reduction by one order of magnitude. Quantitatively this reduction and the resulting optical and electrical properties are analyzed by secondary ion mass spectroscopy, photoluminescence, capacitance versus voltage measurements, low temperature magneto-transport and parasitic current paths in lateral transistor test structures based on two-dimensional electron gases. At a growth temperature of 665 °C the residual charge carrier concentration is decreased to below 1015 cm−3, resulting in insulating behavior and thus making the material suitable for beyond state-of-the-art device applications.http://dx.doi.org/10.1080/14686996.2016.1178565mbeganoxygen incorporation |
| spellingShingle | Felix Schubert Steffen Wirth Friederike Zimmermann Johannes Heitmann Thomas Mikolajick Stefan Schmult Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN Science and Technology of Advanced Materials mbe gan oxygen incorporation |
| title | Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN |
| title_full | Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN |
| title_fullStr | Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN |
| title_full_unstemmed | Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN |
| title_short | Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN |
| title_sort | growth condition dependence of unintentional oxygen incorporation in epitaxial gan |
| topic | mbe gan oxygen incorporation |
| url | http://dx.doi.org/10.1080/14686996.2016.1178565 |
| work_keys_str_mv | AT felixschubert growthconditiondependenceofunintentionaloxygenincorporationinepitaxialgan AT steffenwirth growthconditiondependenceofunintentionaloxygenincorporationinepitaxialgan AT friederikezimmermann growthconditiondependenceofunintentionaloxygenincorporationinepitaxialgan AT johannesheitmann growthconditiondependenceofunintentionaloxygenincorporationinepitaxialgan AT thomasmikolajick growthconditiondependenceofunintentionaloxygenincorporationinepitaxialgan AT stefanschmult growthconditiondependenceofunintentionaloxygenincorporationinepitaxialgan |