Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate...

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Bibliographic Details
Main Authors:	Felix Schubert, Steffen Wirth, Friederike Zimmermann, Johannes Heitmann, Thomas Mikolajick, Stefan Schmult
Format:	Article
Language:	English
Published:	Taylor & Francis Group 2016-01-01
Series:	Science and Technology of Advanced Materials
Subjects:	mbe gan oxygen incorporation
Online Access:	http://dx.doi.org/10.1080/14686996.2016.1178565

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