Synthesis and Crystal Structure of the Ordered Vacancy Compound Cu3In5Se9
This work focuses on the preparation and structural characterization of the semiconductor Cu3In5Se9, an important member of ordered vacancy compounds family, belonging to the semiconductor system I3-III5--VI9, where denotes the cation vacancy which is included in the formula to maintain the same nu...
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| Format: | Article |
| Language: | English |
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Universidade Federal de Mato Grosso do Sul
2021-07-01
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| Series: | Orbital: The Electronic Journal of Chemistry |
| Subjects: | |
| Online Access: | https://periodicos.ufms.br/index.php/orbital/article/view/15606 |
| _version_ | 1797946859215388672 |
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| author | Gerzon E. Delgado Giovanni Marín Syed Wasim Carlos Rincón Dinesh P. Singh |
| author_facet | Gerzon E. Delgado Giovanni Marín Syed Wasim Carlos Rincón Dinesh P. Singh |
| author_sort | Gerzon E. Delgado |
| collection | DOAJ |
| description |
This work focuses on the preparation and structural characterization of the semiconductor Cu3In5Se9, an important member of ordered vacancy compounds family, belonging to the semiconductor system I3-III5--VI9, where denotes the cation vacancy which is included in the formula to maintain the same number of cations and anions sites. This material was synthesized by the Bridgman-Stockbarger technique, and its structure was refined from powder X-ray diffraction data using the Rietveld method. Cu3In5Se9 crystallizes with tetragonal symmetry in the space group P2c (Nº 112), with a = 5.7657(1) Å, c = 11.5353(4) Å, V = 383.47(2) Å3. This ternary compound consists of a three-dimensional arrangement of distorted CuSe4 and InSe4 tetrahedral connected by common faces. In this structure, each Se atom is coordinated by four cations located at the corners of a slightly distorted tetrahedron, and each cation is tetrahedrally bonded to four anions. Cu3In5Se9 is related to the p-type CuInSe2 and n-type CuIn3Se5 semiconductor compounds, which are being used in the preparation of high-efficiency solar cells.
DO: http://dx.doi.org/10.17807/orbital.v13i3.1560
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| first_indexed | 2024-04-10T21:18:47Z |
| format | Article |
| id | doaj.art-a38fed2512584036a7aec0029f85530a |
| institution | Directory Open Access Journal |
| issn | 1984-6428 |
| language | English |
| last_indexed | 2024-04-10T21:18:47Z |
| publishDate | 2021-07-01 |
| publisher | Universidade Federal de Mato Grosso do Sul |
| record_format | Article |
| series | Orbital: The Electronic Journal of Chemistry |
| spelling | doaj.art-a38fed2512584036a7aec0029f85530a2023-01-20T10:48:35ZengUniversidade Federal de Mato Grosso do SulOrbital: The Electronic Journal of Chemistry1984-64282021-07-01133Synthesis and Crystal Structure of the Ordered Vacancy Compound Cu3In5Se9Gerzon E. Delgado0Giovanni Marín1Syed Wasim2Carlos Rincón3Dinesh P. Singh4Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101Millennium Institute for Research in Optics (MIRO), ConcepciónCentro de Estudios en Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, MéridaCentro de Estudios en Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, MéridaMillennium Institute for Research in Optics (MIRO), Concepción and Departamento de Física, Facultad de Ciencias, Universidad de Santiago, Santiago This work focuses on the preparation and structural characterization of the semiconductor Cu3In5Se9, an important member of ordered vacancy compounds family, belonging to the semiconductor system I3-III5--VI9, where denotes the cation vacancy which is included in the formula to maintain the same number of cations and anions sites. This material was synthesized by the Bridgman-Stockbarger technique, and its structure was refined from powder X-ray diffraction data using the Rietveld method. Cu3In5Se9 crystallizes with tetragonal symmetry in the space group P2c (Nº 112), with a = 5.7657(1) Å, c = 11.5353(4) Å, V = 383.47(2) Å3. This ternary compound consists of a three-dimensional arrangement of distorted CuSe4 and InSe4 tetrahedral connected by common faces. In this structure, each Se atom is coordinated by four cations located at the corners of a slightly distorted tetrahedron, and each cation is tetrahedrally bonded to four anions. Cu3In5Se9 is related to the p-type CuInSe2 and n-type CuIn3Se5 semiconductor compounds, which are being used in the preparation of high-efficiency solar cells. DO: http://dx.doi.org/10.17807/orbital.v13i3.1560 https://periodicos.ufms.br/index.php/orbital/article/view/15606Crystal structurePowder X-ray diffractionRietveld methodSemiconductor |
| spellingShingle | Gerzon E. Delgado Giovanni Marín Syed Wasim Carlos Rincón Dinesh P. Singh Synthesis and Crystal Structure of the Ordered Vacancy Compound Cu3In5Se9 Orbital: The Electronic Journal of Chemistry Crystal structure Powder X-ray diffraction Rietveld method Semiconductor |
| title | Synthesis and Crystal Structure of the Ordered Vacancy Compound Cu3In5Se9 |
| title_full | Synthesis and Crystal Structure of the Ordered Vacancy Compound Cu3In5Se9 |
| title_fullStr | Synthesis and Crystal Structure of the Ordered Vacancy Compound Cu3In5Se9 |
| title_full_unstemmed | Synthesis and Crystal Structure of the Ordered Vacancy Compound Cu3In5Se9 |
| title_short | Synthesis and Crystal Structure of the Ordered Vacancy Compound Cu3In5Se9 |
| title_sort | synthesis and crystal structure of the ordered vacancy compound cu3in5se9 |
| topic | Crystal structure Powder X-ray diffraction Rietveld method Semiconductor |
| url | https://periodicos.ufms.br/index.php/orbital/article/view/15606 |
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