Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD
In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH<sub>3</sub>). Ni(111) was selected as a substrate due to its symmetry and close lattice ma...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-07-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/9/7/339 |
| _version_ | 1798040067074162688 |
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| author | Gene Siegel Gordon Gryzbowcki Albert Hilton Christopher Muratore Michael Snure |
| author_facet | Gene Siegel Gordon Gryzbowcki Albert Hilton Christopher Muratore Michael Snure |
| author_sort | Gene Siegel |
| collection | DOAJ |
| description | In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH<sub>3</sub>). Ni(111) was selected as a substrate due to its symmetry and close lattice matching to hBN. Using atomic force microscopy (AFM) we find hBN is well aligned to the Ni below with in plane alignment between the hBN zig zag edge and the <110> of Ni. We further investigate the growth process exploring interaction between precursors and the Ni(111) substrate. Under TEB pre-exposure Ni-B and graphitic compounds form which disrupts the formation of layered phase pure hBN; while NH<sub>3</sub> pre-exposure results in high quality films. Tunnel transport of films was investigated by conductive-probe AFM demonstrating films to be highly resistive. These findings improve our understanding of the chemistry and mechanisms involved in hBN growth on metal surfaces by MOCVD. |
| first_indexed | 2024-04-11T22:02:23Z |
| format | Article |
| id | doaj.art-a3a25b129d834ee9a2cbc12722741aa7 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-11T22:02:23Z |
| publishDate | 2019-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-a3a25b129d834ee9a2cbc12722741aa72022-12-22T04:00:51ZengMDPI AGCrystals2073-43522019-07-019733910.3390/cryst9070339cryst9070339Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVDGene Siegel0Gordon Gryzbowcki1Albert Hilton2Christopher Muratore3Michael Snure4Air Force Research Laboratory, Sensor Directorate, 2241 Avionics Circle, Wright Patterson AFB, OH 45433, USAAir Force Research Laboratory, Sensor Directorate, 2241 Avionics Circle, Wright Patterson AFB, OH 45433, USAKBR, 2241 Avionics Circle, Wright Patterson AFB, OH 45433, USAUniversity of Dayton, Department of Chemical and Materials Engineering, 300 College Park, Dayton, OH 45469, USAAir Force Research Laboratory, Sensor Directorate, 2241 Avionics Circle, Wright Patterson AFB, OH 45433, USAIn this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH<sub>3</sub>). Ni(111) was selected as a substrate due to its symmetry and close lattice matching to hBN. Using atomic force microscopy (AFM) we find hBN is well aligned to the Ni below with in plane alignment between the hBN zig zag edge and the <110> of Ni. We further investigate the growth process exploring interaction between precursors and the Ni(111) substrate. Under TEB pre-exposure Ni-B and graphitic compounds form which disrupts the formation of layered phase pure hBN; while NH<sub>3</sub> pre-exposure results in high quality films. Tunnel transport of films was investigated by conductive-probe AFM demonstrating films to be highly resistive. These findings improve our understanding of the chemistry and mechanisms involved in hBN growth on metal surfaces by MOCVD.https://www.mdpi.com/2073-4352/9/7/339MOCVDhBNthin film2D materials |
| spellingShingle | Gene Siegel Gordon Gryzbowcki Albert Hilton Christopher Muratore Michael Snure Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD Crystals MOCVD hBN thin film 2D materials |
| title | Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD |
| title_full | Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD |
| title_fullStr | Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD |
| title_full_unstemmed | Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD |
| title_short | Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD |
| title_sort | growth of multi layer hbn on ni 111 substrates via mocvd |
| topic | MOCVD hBN thin film 2D materials |
| url | https://www.mdpi.com/2073-4352/9/7/339 |
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