Infrared and Terahertz Spectra of Sn-Doped Vanadium Dioxide Films
This work reports the effect of tin (Sn) doping on the infrared (IR) and terahertz (THz) properties of vanadium dioxide (VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>...
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MDPI AG
2023-06-01
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author | Alexander Grebenchukov Olga Boytsova Alexey Shakhmin Artem Tatarenko Olga Makarevich Ilya Roslyakov Grigory Kropotov Mikhail Khodzitsky |
author_facet | Alexander Grebenchukov Olga Boytsova Alexey Shakhmin Artem Tatarenko Olga Makarevich Ilya Roslyakov Grigory Kropotov Mikhail Khodzitsky |
author_sort | Alexander Grebenchukov |
collection | DOAJ |
description | This work reports the effect of tin (Sn) doping on the infrared (IR) and terahertz (THz) properties of vanadium dioxide (VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>) films. The films were grown by hydrothermal synthesis with a post-annealing process and then fully characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and temperature-controlled electrical resistivity as well as IR and THz spectroscopy techniques. Utilizing (NH<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>4</mn></msub></semantics></math></inline-formula>)<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>SnF<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>6</mn></msub></semantics></math></inline-formula> as a Sn precursor allows the preparation of homogeneous Sn-doped VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> films. Doping of VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> films with Sn led to an increase in the thermal hysteresis width while conserving the high modulation depth in the mid-IR regime, which would be beneficial for the applications of VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> films in IR memory devices. A further analysis shows that Sn doping of VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> films significantly affects the temperature-dependent THz optical properties, in particular leading to the suppression of the temperature-driven THz transmission modulation. These results indicate Sn-doped VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> films as a promising material for the development of switchable IR/THz dichroic components. |
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spelling | doaj.art-a3a966ea78fc45b49b302adf92fc022f2023-11-18T09:44:44ZengMDPI AGCeramics2571-61312023-06-01621291130110.3390/ceramics6020079Infrared and Terahertz Spectra of Sn-Doped Vanadium Dioxide FilmsAlexander Grebenchukov0Olga Boytsova1Alexey Shakhmin2Artem Tatarenko3Olga Makarevich4Ilya Roslyakov5Grigory Kropotov6Mikhail Khodzitsky7Tydex LLC, 194292 Saint Petersburg, RussiaDepartment of Chemistry, Lomonosov Moscow State University, 119991 Moscow, RussiaTydex LLC, 194292 Saint Petersburg, RussiaDepartment of Materials Science, Lomonosov Moscow State University, 119991 Moscow, RussiaDepartment of Chemistry, Lomonosov Moscow State University, 119991 Moscow, RussiaDepartment of Materials Science, Lomonosov Moscow State University, 119991 Moscow, RussiaTydex LLC, 194292 Saint Petersburg, RussiaTydex LLC, 194292 Saint Petersburg, RussiaThis work reports the effect of tin (Sn) doping on the infrared (IR) and terahertz (THz) properties of vanadium dioxide (VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>) films. The films were grown by hydrothermal synthesis with a post-annealing process and then fully characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and temperature-controlled electrical resistivity as well as IR and THz spectroscopy techniques. Utilizing (NH<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>4</mn></msub></semantics></math></inline-formula>)<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>SnF<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>6</mn></msub></semantics></math></inline-formula> as a Sn precursor allows the preparation of homogeneous Sn-doped VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> films. Doping of VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> films with Sn led to an increase in the thermal hysteresis width while conserving the high modulation depth in the mid-IR regime, which would be beneficial for the applications of VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> films in IR memory devices. A further analysis shows that Sn doping of VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> films significantly affects the temperature-dependent THz optical properties, in particular leading to the suppression of the temperature-driven THz transmission modulation. These results indicate Sn-doped VO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> films as a promising material for the development of switchable IR/THz dichroic components.https://www.mdpi.com/2571-6131/6/2/79Sn dopinginfrared spectroscopyterahertz transmissiondichroic optical elements |
spellingShingle | Alexander Grebenchukov Olga Boytsova Alexey Shakhmin Artem Tatarenko Olga Makarevich Ilya Roslyakov Grigory Kropotov Mikhail Khodzitsky Infrared and Terahertz Spectra of Sn-Doped Vanadium Dioxide Films Ceramics Sn doping infrared spectroscopy terahertz transmission dichroic optical elements |
title | Infrared and Terahertz Spectra of Sn-Doped Vanadium Dioxide Films |
title_full | Infrared and Terahertz Spectra of Sn-Doped Vanadium Dioxide Films |
title_fullStr | Infrared and Terahertz Spectra of Sn-Doped Vanadium Dioxide Films |
title_full_unstemmed | Infrared and Terahertz Spectra of Sn-Doped Vanadium Dioxide Films |
title_short | Infrared and Terahertz Spectra of Sn-Doped Vanadium Dioxide Films |
title_sort | infrared and terahertz spectra of sn doped vanadium dioxide films |
topic | Sn doping infrared spectroscopy terahertz transmission dichroic optical elements |
url | https://www.mdpi.com/2571-6131/6/2/79 |
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