High-mobility BaSnO3 grown by oxide molecular beam epitaxy
High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-01-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4939657 |
| _version_ | 1819114993427152896 |
|---|---|
| author | Santosh Raghavan Timo Schumann Honggyu Kim Jack Y. Zhang Tyler A. Cain Susanne Stemmer |
| author_facet | Santosh Raghavan Timo Schumann Honggyu Kim Jack Y. Zhang Tyler A. Cain Susanne Stemmer |
| author_sort | Santosh Raghavan |
| collection | DOAJ |
| description | High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V−1 s−1 in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices. |
| first_indexed | 2024-12-22T04:54:07Z |
| format | Article |
| id | doaj.art-a3bf0dd9a9844fb1847b4dde8e2ab7ff |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-22T04:54:07Z |
| publishDate | 2016-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-a3bf0dd9a9844fb1847b4dde8e2ab7ff2022-12-21T18:38:25ZengAIP Publishing LLCAPL Materials2166-532X2016-01-0141016106016106-510.1063/1.4939657004601APMHigh-mobility BaSnO3 grown by oxide molecular beam epitaxySantosh Raghavan0Timo Schumann1Honggyu Kim2Jack Y. Zhang3Tyler A. Cain4Susanne Stemmer5Materials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAHigh-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V−1 s−1 in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices.http://dx.doi.org/10.1063/1.4939657 |
| spellingShingle | Santosh Raghavan Timo Schumann Honggyu Kim Jack Y. Zhang Tyler A. Cain Susanne Stemmer High-mobility BaSnO3 grown by oxide molecular beam epitaxy APL Materials |
| title | High-mobility BaSnO3 grown by oxide molecular beam epitaxy |
| title_full | High-mobility BaSnO3 grown by oxide molecular beam epitaxy |
| title_fullStr | High-mobility BaSnO3 grown by oxide molecular beam epitaxy |
| title_full_unstemmed | High-mobility BaSnO3 grown by oxide molecular beam epitaxy |
| title_short | High-mobility BaSnO3 grown by oxide molecular beam epitaxy |
| title_sort | high mobility basno3 grown by oxide molecular beam epitaxy |
| url | http://dx.doi.org/10.1063/1.4939657 |
| work_keys_str_mv | AT santoshraghavan highmobilitybasno3grownbyoxidemolecularbeamepitaxy AT timoschumann highmobilitybasno3grownbyoxidemolecularbeamepitaxy AT honggyukim highmobilitybasno3grownbyoxidemolecularbeamepitaxy AT jackyzhang highmobilitybasno3grownbyoxidemolecularbeamepitaxy AT tyleracain highmobilitybasno3grownbyoxidemolecularbeamepitaxy AT susannestemmer highmobilitybasno3grownbyoxidemolecularbeamepitaxy |