High-mobility BaSnO3 grown by oxide molecular beam epitaxy

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3...

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Bibliographic Details
Main Authors:	Santosh Raghavan, Timo Schumann, Honggyu Kim, Jack Y. Zhang, Tyler A. Cain, Susanne Stemmer
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-01-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.4939657

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