High efficiency low thermal resistance semiconductor laser with novel insulating layer and coating film
Abstract Thermal effect of semiconductor lasers is the biggest challenge to the development of semiconductor lasers. This problem limits the life and performance of high‐power laser diode. In this letter, we have reduced the thermal resistance of laser to enhance its heat dissipation capability. For...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-07-01
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| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/ell2.12168 |
| _version_ | 1818064033633271808 |
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| author | Yuancheng Wang Aiyi Qi Yufei Wang Hongwei Qu Wanhua Zheng |
| author_facet | Yuancheng Wang Aiyi Qi Yufei Wang Hongwei Qu Wanhua Zheng |
| author_sort | Yuancheng Wang |
| collection | DOAJ |
| description | Abstract Thermal effect of semiconductor lasers is the biggest challenge to the development of semiconductor lasers. This problem limits the life and performance of high‐power laser diode. In this letter, we have reduced the thermal resistance of laser to enhance its heat dissipation capability. For this, we choose aluminium nitride (AlN) to replace traditional materials as insulating layer, as well as a passivation film for facet coating. The impact of insulation layer and facet coating on the thermal rollover process is analyzed. Finite element method simulations are compared with the experimental result. The comparison shows that the thermal resistance of the laser with the new insulating layer is reduced compared with normal laser diodes (LD). Eventually, the maximum conversion efficiency is 67.5% at room temperature and thermal resistance is 1.81C° W–1. |
| first_indexed | 2024-12-10T14:29:34Z |
| format | Article |
| id | doaj.art-a3e0e0cdc49f4347a44c4a15a286a5c3 |
| institution | Directory Open Access Journal |
| issn | 0013-5194 1350-911X |
| language | English |
| last_indexed | 2024-12-10T14:29:34Z |
| publishDate | 2021-07-01 |
| publisher | Wiley |
| record_format | Article |
| series | Electronics Letters |
| spelling | doaj.art-a3e0e0cdc49f4347a44c4a15a286a5c32022-12-22T01:44:58ZengWileyElectronics Letters0013-51941350-911X2021-07-01571456456610.1049/ell2.12168High efficiency low thermal resistance semiconductor laser with novel insulating layer and coating filmYuancheng Wang0Aiyi Qi1Yufei Wang2Hongwei Qu3Wanhua Zheng4Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors Chinese Academy of Sciences Beijing ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors Chinese Academy of Sciences Beijing ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors Chinese Academy of Sciences Beijing ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors Chinese Academy of Sciences Beijing ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors Chinese Academy of Sciences Beijing ChinaAbstract Thermal effect of semiconductor lasers is the biggest challenge to the development of semiconductor lasers. This problem limits the life and performance of high‐power laser diode. In this letter, we have reduced the thermal resistance of laser to enhance its heat dissipation capability. For this, we choose aluminium nitride (AlN) to replace traditional materials as insulating layer, as well as a passivation film for facet coating. The impact of insulation layer and facet coating on the thermal rollover process is analyzed. Finite element method simulations are compared with the experimental result. The comparison shows that the thermal resistance of the laser with the new insulating layer is reduced compared with normal laser diodes (LD). Eventually, the maximum conversion efficiency is 67.5% at room temperature and thermal resistance is 1.81C° W–1.https://doi.org/10.1049/ell2.12168Lasing action in semiconductorsOther optical materialsOptical coatingsII-VI and III-V semiconductorsOptical materialsOptical coatings and filters |
| spellingShingle | Yuancheng Wang Aiyi Qi Yufei Wang Hongwei Qu Wanhua Zheng High efficiency low thermal resistance semiconductor laser with novel insulating layer and coating film Electronics Letters Lasing action in semiconductors Other optical materials Optical coatings II-VI and III-V semiconductors Optical materials Optical coatings and filters |
| title | High efficiency low thermal resistance semiconductor laser with novel insulating layer and coating film |
| title_full | High efficiency low thermal resistance semiconductor laser with novel insulating layer and coating film |
| title_fullStr | High efficiency low thermal resistance semiconductor laser with novel insulating layer and coating film |
| title_full_unstemmed | High efficiency low thermal resistance semiconductor laser with novel insulating layer and coating film |
| title_short | High efficiency low thermal resistance semiconductor laser with novel insulating layer and coating film |
| title_sort | high efficiency low thermal resistance semiconductor laser with novel insulating layer and coating film |
| topic | Lasing action in semiconductors Other optical materials Optical coatings II-VI and III-V semiconductors Optical materials Optical coatings and filters |
| url | https://doi.org/10.1049/ell2.12168 |
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