Bandgap narrowing in zincblende III–V semiconductors: Finite-temperature full random-phase approximation and general analytical model

Bandgap narrowing in zincblende III–V semiconductors: Finite-temperature full random-phase approximation and general analytical model

The bandgap narrowing (BGN) in zincblende III–V semiconductors is calculated in a finite-temperature full Random-Phase Approximation (RPA) formalism based on an isotropic dispersion model. The cases of n-type and p-type quasi-neutral regions and the case of a neutral electron–hole plasma are elabora...

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Bibliographic Details
Main Author:	A. Schenk
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2023-07-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0149190

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