| Summary: | Surface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO<sub>3</sub> photodetectors. An ultrathin MoO<sub>3</sub>/Ir/SiO<sub>2</sub>/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO<sub>2</sub>/Si sample displays a sheet carrier concentration of 5.76 × 10<sup>11</sup>/cm², which subsequently increases to 6.74 × 10<sup>12</sup>/cm² after annealing treatment, showing a negative photoconductivity behavior at a 0 V bias voltage. This suggests that annealing enhances the diffusion of Ir into the MoO<sub>3</sub> layer, resulting in an increased phonon scattering probability and, consequently, an extension of the negative photoconductivity behavior. This underscores the significance of negative photoconductive devices in the realm of optoelectronic applications.
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