Negative Photoconductivity in 2D α-MoO<sub>3</sub>/Ir Self-Powered Photodetector: Impact of Post-Annealing
Surface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO<sub>3</sub> photodetectors. An ultrathin MoO<sub>3</sub>/Ir/SiO<sub>...
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2023-10-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/20/6756 |
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| author | Mohamed A. Basyooni-M. Kabatas Shrouk E. Zaki Khalid Rahmani Redouane En-nadir Yasin Ramazan Eker |
| author_facet | Mohamed A. Basyooni-M. Kabatas Shrouk E. Zaki Khalid Rahmani Redouane En-nadir Yasin Ramazan Eker |
| author_sort | Mohamed A. Basyooni-M. Kabatas |
| collection | DOAJ |
| description | Surface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO<sub>3</sub> photodetectors. An ultrathin MoO<sub>3</sub>/Ir/SiO<sub>2</sub>/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO<sub>2</sub>/Si sample displays a sheet carrier concentration of 5.76 × 10<sup>11</sup>/cm², which subsequently increases to 6.74 × 10<sup>12</sup>/cm² after annealing treatment, showing a negative photoconductivity behavior at a 0 V bias voltage. This suggests that annealing enhances the diffusion of Ir into the MoO<sub>3</sub> layer, resulting in an increased phonon scattering probability and, consequently, an extension of the negative photoconductivity behavior. This underscores the significance of negative photoconductive devices in the realm of optoelectronic applications. |
| first_indexed | 2024-03-10T21:06:00Z |
| format | Article |
| id | doaj.art-a4998e682e4c40a7882450bd5433fd7a |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T21:06:00Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-a4998e682e4c40a7882450bd5433fd7a2023-11-19T17:11:53ZengMDPI AGMaterials1996-19442023-10-011620675610.3390/ma16206756Negative Photoconductivity in 2D α-MoO<sub>3</sub>/Ir Self-Powered Photodetector: Impact of Post-AnnealingMohamed A. Basyooni-M. Kabatas0Shrouk E. Zaki1Khalid Rahmani2Redouane En-nadir3Yasin Ramazan Eker4Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The NetherlandsDepartment of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, TurkeyDepartment of Physics, Ecole Normale Supérieure (ENS), Mohammed V University, Rabat 10140, MoroccoLaboratory of Solid-State Physics, Faculty of Sciences Dhar el Mahraz, University Sidi Mohammed Ben Abdellah, P.O. Box 1796, Atlas Fez 30000, MoroccoDepartment of Basic Sciences, Faculty of Engineering, Necmettin Erbakan University, Konya 42090, TurkeySurface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO<sub>3</sub> photodetectors. An ultrathin MoO<sub>3</sub>/Ir/SiO<sub>2</sub>/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO<sub>2</sub>/Si sample displays a sheet carrier concentration of 5.76 × 10<sup>11</sup>/cm², which subsequently increases to 6.74 × 10<sup>12</sup>/cm² after annealing treatment, showing a negative photoconductivity behavior at a 0 V bias voltage. This suggests that annealing enhances the diffusion of Ir into the MoO<sub>3</sub> layer, resulting in an increased phonon scattering probability and, consequently, an extension of the negative photoconductivity behavior. This underscores the significance of negative photoconductive devices in the realm of optoelectronic applications.https://www.mdpi.com/1996-1944/16/20/6756negative photoconductivitythin filmphotodetectorplasmonic2D oxide semiconductors |
| spellingShingle | Mohamed A. Basyooni-M. Kabatas Shrouk E. Zaki Khalid Rahmani Redouane En-nadir Yasin Ramazan Eker Negative Photoconductivity in 2D α-MoO<sub>3</sub>/Ir Self-Powered Photodetector: Impact of Post-Annealing Materials negative photoconductivity thin film photodetector plasmonic 2D oxide semiconductors |
| title | Negative Photoconductivity in 2D α-MoO<sub>3</sub>/Ir Self-Powered Photodetector: Impact of Post-Annealing |
| title_full | Negative Photoconductivity in 2D α-MoO<sub>3</sub>/Ir Self-Powered Photodetector: Impact of Post-Annealing |
| title_fullStr | Negative Photoconductivity in 2D α-MoO<sub>3</sub>/Ir Self-Powered Photodetector: Impact of Post-Annealing |
| title_full_unstemmed | Negative Photoconductivity in 2D α-MoO<sub>3</sub>/Ir Self-Powered Photodetector: Impact of Post-Annealing |
| title_short | Negative Photoconductivity in 2D α-MoO<sub>3</sub>/Ir Self-Powered Photodetector: Impact of Post-Annealing |
| title_sort | negative photoconductivity in 2d α moo sub 3 sub ir self powered photodetector impact of post annealing |
| topic | negative photoconductivity thin film photodetector plasmonic 2D oxide semiconductors |
| url | https://www.mdpi.com/1996-1944/16/20/6756 |
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