Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures
Techniques for the remote and in situ control of carrier recombination and drift parameters during proton irradiation are presented. The measurement and evaluation of the carrier recombination and drift-diffusion characteristics are based on simultaneous analysis of microwave probed photoconductivit...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2011-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3605715 |
| _version_ | 1811269750555148288 |
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| author | E. Gaubas T. Čeponis J. Vaitkus J. Raisanen |
| author_facet | E. Gaubas T. Čeponis J. Vaitkus J. Raisanen |
| author_sort | E. Gaubas |
| collection | DOAJ |
| description | Techniques for the remote and in situ control of carrier recombination and drift parameters during proton irradiation are presented. The measurement and evaluation of the carrier recombination and drift-diffusion characteristics are based on simultaneous analysis of microwave probed photoconductivity transients and of the induced charge collection current transients in diodes with applied electric field during the proton exposure. |
| first_indexed | 2024-04-12T21:48:53Z |
| format | Article |
| id | doaj.art-a503b5c2b57c401a872b5a6544de572d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T21:48:53Z |
| publishDate | 2011-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-a503b5c2b57c401a872b5a6544de572d2022-12-22T03:15:33ZengAIP Publishing LLCAIP Advances2158-32262011-06-0112022143022143-1310.1063/1.3605715041102ADVStudy of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structuresE. Gaubas0T. Čeponis1J. Vaitkus2J. Raisanen3Institute of Applied Research, Vilnius University, LithuaniaInstitute of Applied Research, Vilnius University, LithuaniaInstitute of Applied Research, Vilnius University, LithuaniaDivision of Materials Physics, Department of Physics, University of Helsinki, FinlandTechniques for the remote and in situ control of carrier recombination and drift parameters during proton irradiation are presented. The measurement and evaluation of the carrier recombination and drift-diffusion characteristics are based on simultaneous analysis of microwave probed photoconductivity transients and of the induced charge collection current transients in diodes with applied electric field during the proton exposure.http://dx.doi.org/10.1063/1.3605715 |
| spellingShingle | E. Gaubas T. Čeponis J. Vaitkus J. Raisanen Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures AIP Advances |
| title | Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures |
| title_full | Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures |
| title_fullStr | Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures |
| title_full_unstemmed | Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures |
| title_short | Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures |
| title_sort | study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures |
| url | http://dx.doi.org/10.1063/1.3605715 |
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