Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures
Techniques for the remote and in situ control of carrier recombination and drift parameters during proton irradiation are presented. The measurement and evaluation of the carrier recombination and drift-diffusion characteristics are based on simultaneous analysis of microwave probed photoconductivit...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2011-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3605715 |