Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications
Gallium nitride (GaN) materials with a high chemical stability and biocompatibility are well suited for bio-sensing applications and evanescent wave spectroscopy. However, GaN poses challenges for processing, especially for deep etching using conventional etching techniques. Here, we present a dry-e...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-03-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/9/3/176 |
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| author | Yu-Li Hsieh Wen-Shao Chen Liann-Be Chang Lee Chow Samuel Borges Alfons Schulte Shiang-Fu Huang Ming-Jer Jeng Chih-Jen Yu |
| author_facet | Yu-Li Hsieh Wen-Shao Chen Liann-Be Chang Lee Chow Samuel Borges Alfons Schulte Shiang-Fu Huang Ming-Jer Jeng Chih-Jen Yu |
| author_sort | Yu-Li Hsieh |
| collection | DOAJ |
| description | Gallium nitride (GaN) materials with a high chemical stability and biocompatibility are well suited for bio-sensing applications and evanescent wave spectroscopy. However, GaN poses challenges for processing, especially for deep etching using conventional etching techniques. Here, we present a dry-etching technique using tetraethyl orthosilicate (TEOS) oxide as an etching barrier. We demonstrate that a sharp, vertically-etched waveguide pattern can be obtained with low surface roughness. The fabricated GaN waveguide structure is further characterized using field-emission scanning electron microscopy, Raman spectroscopy, and a stylus profilometer. |
| first_indexed | 2024-04-11T22:09:00Z |
| format | Article |
| id | doaj.art-a5057b2384384bc9803b96cb90ebc6dc |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-11T22:09:00Z |
| publishDate | 2019-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-a5057b2384384bc9803b96cb90ebc6dc2022-12-22T04:00:37ZengMDPI AGCrystals2073-43522019-03-019317610.3390/cryst9030176cryst9030176Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic ApplicationsYu-Li Hsieh0Wen-Shao Chen1Liann-Be Chang2Lee Chow3Samuel Borges4Alfons Schulte5Shiang-Fu Huang6Ming-Jer Jeng7Chih-Jen Yu8Department of Electronics Engineering, Chang Gung University, Guishan, Taoyuan 333, TaiwanGreen Technology Research Center, Chang Gung University, Guishan, Taoyuan 333, TaiwanGreen Technology Research Center, Chang Gung University, Guishan, Taoyuan 333, TaiwanDepartment of Physics and NanoScience Technology Center, University of Central Florida, Orlando, FL 32816, USADepartment of Physics, University of Central Florida, Orlando, FL 32816, USADepartment of Physics and College of Optics and Photonics, University of Central Florida, Orlando, FL 32816, USADepartment of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Linkou, Taoyuan 333, TaiwanDepartment of Electronics Engineering, Chang Gung University, Guishan, Taoyuan 333, TaiwanGreen Technology Research Center, Chang Gung University, Guishan, Taoyuan 333, TaiwanGallium nitride (GaN) materials with a high chemical stability and biocompatibility are well suited for bio-sensing applications and evanescent wave spectroscopy. However, GaN poses challenges for processing, especially for deep etching using conventional etching techniques. Here, we present a dry-etching technique using tetraethyl orthosilicate (TEOS) oxide as an etching barrier. We demonstrate that a sharp, vertically-etched waveguide pattern can be obtained with low surface roughness. The fabricated GaN waveguide structure is further characterized using field-emission scanning electron microscopy, Raman spectroscopy, and a stylus profilometer.https://www.mdpi.com/2073-4352/9/3/176Gallium nitride (GaN)waveguidesemiconductor processingtetraethyl orthosilicate (TEOS) |
| spellingShingle | Yu-Li Hsieh Wen-Shao Chen Liann-Be Chang Lee Chow Samuel Borges Alfons Schulte Shiang-Fu Huang Ming-Jer Jeng Chih-Jen Yu Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications Crystals Gallium nitride (GaN) waveguide semiconductor processing tetraethyl orthosilicate (TEOS) |
| title | Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications |
| title_full | Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications |
| title_fullStr | Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications |
| title_full_unstemmed | Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications |
| title_short | Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications |
| title_sort | deep etched gallium nitride waveguide for raman spectroscopic applications |
| topic | Gallium nitride (GaN) waveguide semiconductor processing tetraethyl orthosilicate (TEOS) |
| url | https://www.mdpi.com/2073-4352/9/3/176 |
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