Effect of copper on the growth and photochemical properties of lanthanum manganite film electrode

This study demonstrates that p-type copper-doped lanthanum manganite (LaMnO3) film on aluminum plate substrate is a stable and efficient photo-absorber for hydrogen collection from water. Compared to using photocatalyst powder, thin-film reactor is a convenient method for industrial applications as...

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Main Authors: Guan-Ting Pan, Siewhui Chong, Thomas C.-K. Yang, Pradeep Shukla, Wee Siong Chiu, Joo Ching Juan
Format: Article
Language:English
Published: Elsevier 2017-01-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379717307647
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author Guan-Ting Pan
Siewhui Chong
Thomas C.-K. Yang
Pradeep Shukla
Wee Siong Chiu
Joo Ching Juan
author_facet Guan-Ting Pan
Siewhui Chong
Thomas C.-K. Yang
Pradeep Shukla
Wee Siong Chiu
Joo Ching Juan
author_sort Guan-Ting Pan
collection DOAJ
description This study demonstrates that p-type copper-doped lanthanum manganite (LaMnO3) film on aluminum plate substrate is a stable and efficient photo-absorber for hydrogen collection from water. Compared to using photocatalyst powder, thin-film reactor is a convenient method for industrial applications as no further filtration process is required. The copper-doped LaMnO3 semiconductor films were readily deposited on aluminum plate substrates via sol-gel approach as well as spin-coating technology using photoelectrochemical cathodic current under AM 1.5 G illumination (100 mW/cm2). The influences of copper loading on LaMnO3 films in terms of surface and internal pore structure, morphology, optical and photoelectrochemical properties were comprehensively investigated. The bandgap energy and carrier density of the copper-doped LaMnO3 films were found to range between 2.670–2.677 eV and 4.80 × 1015–6.18 × 1015 cm−3, respectively. The flat band potentials of these films lied in the range of −0.424 to +0.067 V vs. Ag/AgCl electrode (or −0.217 to +0.232 V vs. NHE) based on the Mott-Schottky measurements. When the molar ratio of copper in the reaction solution was higher than 0.6, the copper-doped LaMnO3 film possessed the characteristics of a p-type semiconductor and yielded the best photo-performance when compared to n-type semiconductor films. Keywords: Photoelectrochemical, Photoelectrode, Photocatalysis, Hydrogen, Lanthanum, Copper
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spelling doaj.art-a5261197491346b18762af3709031dbc2022-12-22T00:20:13ZengElsevierResults in Physics2211-37972017-01-01721182123Effect of copper on the growth and photochemical properties of lanthanum manganite film electrodeGuan-Ting Pan0Siewhui Chong1Thomas C.-K. Yang2Pradeep Shukla3Wee Siong Chiu4Joo Ching Juan5Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1 Zhongxiao E. Rd. Sec. 3, Da’an District, Taipei City 106, Taiwan, ROCDepartment of Chemical and Environmental Engineering, University of Nottingham Malaysia Campus, Jalan Broga, 43500 Selangor, MalaysiaDepartment of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1 Zhongxiao E. Rd. Sec. 3, Da’an District, Taipei City 106, Taiwan, ROC; Corresponding author.School of Chemical Engineering, University of Queensland, Brisbane, St Lucia, QLD 4072, AustraliaLow Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur, MalaysiaNanotechnology & Catalysis Research Centre, University of Malaya, 50603 Kuala Lumpur, MalaysiaThis study demonstrates that p-type copper-doped lanthanum manganite (LaMnO3) film on aluminum plate substrate is a stable and efficient photo-absorber for hydrogen collection from water. Compared to using photocatalyst powder, thin-film reactor is a convenient method for industrial applications as no further filtration process is required. The copper-doped LaMnO3 semiconductor films were readily deposited on aluminum plate substrates via sol-gel approach as well as spin-coating technology using photoelectrochemical cathodic current under AM 1.5 G illumination (100 mW/cm2). The influences of copper loading on LaMnO3 films in terms of surface and internal pore structure, morphology, optical and photoelectrochemical properties were comprehensively investigated. The bandgap energy and carrier density of the copper-doped LaMnO3 films were found to range between 2.670–2.677 eV and 4.80 × 1015–6.18 × 1015 cm−3, respectively. The flat band potentials of these films lied in the range of −0.424 to +0.067 V vs. Ag/AgCl electrode (or −0.217 to +0.232 V vs. NHE) based on the Mott-Schottky measurements. When the molar ratio of copper in the reaction solution was higher than 0.6, the copper-doped LaMnO3 film possessed the characteristics of a p-type semiconductor and yielded the best photo-performance when compared to n-type semiconductor films. Keywords: Photoelectrochemical, Photoelectrode, Photocatalysis, Hydrogen, Lanthanum, Copperhttp://www.sciencedirect.com/science/article/pii/S2211379717307647
spellingShingle Guan-Ting Pan
Siewhui Chong
Thomas C.-K. Yang
Pradeep Shukla
Wee Siong Chiu
Joo Ching Juan
Effect of copper on the growth and photochemical properties of lanthanum manganite film electrode
Results in Physics
title Effect of copper on the growth and photochemical properties of lanthanum manganite film electrode
title_full Effect of copper on the growth and photochemical properties of lanthanum manganite film electrode
title_fullStr Effect of copper on the growth and photochemical properties of lanthanum manganite film electrode
title_full_unstemmed Effect of copper on the growth and photochemical properties of lanthanum manganite film electrode
title_short Effect of copper on the growth and photochemical properties of lanthanum manganite film electrode
title_sort effect of copper on the growth and photochemical properties of lanthanum manganite film electrode
url http://www.sciencedirect.com/science/article/pii/S2211379717307647
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